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BTB1580L3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BTB1580L3
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 5 W
   Tensión colector-base (Vcb): 120 V
   Tensión colector-emisor (Vce): 120 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 200 pF
   Ganancia de corriente contínua (hfe): 1000
   Paquete / Cubierta: SOT223

 Búsqueda de reemplazo de transistor bipolar BTB1580L3

 

BTB1580L3 Datasheet (PDF)

 ..1. Size:234K  cystek
btb1580l3.pdf

BTB1580L3
BTB1580L3

Spec. No. : C655L3 Issued Date : 2011.07.14 CYStech Electronics Corp.Revised Date : Page No. : 1/6 PNP Epitaxial Planar Transistor BTB1580L3 Description The BTB1580L3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Pb-free package process is adopted. Equivalent Circuit Outline BTB1580L3 SOT-223 CE C

 7.1. Size:297K  cystek
btb1580j3.pdf

BTB1580L3
BTB1580L3

Spec. No. : C655J3 Issued Date : 2008.07.25 CYStech Electronics Corp.Revised Date :2010.12.08 Page No. : 1/6 PNP Epitaxial Planar Transistor BVCEO -120VBTB1580J3 IC -4ARCESAT 600m Description The BTB1580J3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Pb-free package process is adopted. Equivalent

 7.2. Size:229K  cystek
btb1580m3.pdf

BTB1580L3
BTB1580L3

Spec. No. : C655M3 Issued Date : 2004.03.18 CYStech Electronics Corp.Revised Date :2013.08.12 Page No. : 1/6 PNP Epitaxial Planar Transistor BTB1580M3 Description The BTB1580M3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Pb-free package process is adopted. Equivalent Circuit Outline BTB1580M3 SOT-89 C

 9.1. Size:295K  cystek
btb1590n3.pdf

BTB1580L3
BTB1580L3

Spec. No. : C313N3 Issued Date : 2002.06.18 CYStech Electronics Corp.Revised Date : 2014.01.13 Page No. : 1/8 Low V PNP Epitaxial Planar Transistor CESATBTB1590N3Features Low VCE(SAT), VCE(SAT)=-0.21V(typically) at IC=-500mA/IB=-50mA. Complementary to BTD2444N3. Pb-free lead plating and halogen-free package Symbol Outline BTB1590N3 SOT-23 BBase CC

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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