BTB1580L3 Specs and Replacement

Type Designator: BTB1580L3

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 5 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 200 pF

Forward Current Transfer Ratio (hFE), MIN: 1000

Noise Figure, dB: -

Package: SOT223

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BTB1580L3 datasheet

 ..1. Size:234K  cystek

 btb1580l3.pdf pdf_icon

BTB1580L3

Spec. No. C655L3 Issued Date 2011.07.14 CYStech Electronics Corp. Revised Date Page No. 1/6 PNP Epitaxial Planar Transistor BTB1580L3 Description The BTB1580L3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Pb-free package process is adopted. Equivalent Circuit Outline BTB1580L3 SOT-223 C E C ... See More ⇒

 7.1. Size:297K  cystek

 btb1580j3.pdf pdf_icon

BTB1580L3

Spec. No. C655J3 Issued Date 2008.07.25 CYStech Electronics Corp. Revised Date 2010.12.08 Page No. 1/6 PNP Epitaxial Planar Transistor BVCEO -120V BTB1580J3 IC -4A RCESAT 600m Description The BTB1580J3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Pb-free package process is adopted. Equivalent ... See More ⇒

 7.2. Size:229K  cystek

 btb1580m3.pdf pdf_icon

BTB1580L3

Spec. No. C655M3 Issued Date 2004.03.18 CYStech Electronics Corp. Revised Date 2013.08.12 Page No. 1/6 PNP Epitaxial Planar Transistor BTB1580M3 Description The BTB1580M3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Pb-free package process is adopted. Equivalent Circuit Outline BTB1580M3 SOT-89 C... See More ⇒

 9.1. Size:295K  cystek

 btb1590n3.pdf pdf_icon

BTB1580L3

Spec. No. C313N3 Issued Date 2002.06.18 CYStech Electronics Corp. Revised Date 2014.01.13 Page No. 1/8 Low V PNP Epitaxial Planar Transistor CESAT BTB1590N3 Features Low VCE(SAT), VCE(SAT)=-0.21V(typically) at IC=-500mA/IB=-50mA. Complementary to BTD2444N3. Pb-free lead plating and halogen-free package Symbol Outline BTB1590N3 SOT-23 B Base C C... See More ⇒

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Detailed specifications: BTB1424AM3, BTB1424AT3, BTB1424FP, BTB1424L3, BTB1424N3, BTB1427M3, BTB1498N3, BTB1580J3, C5198, BTB1580M3, BTB1590N3, BTB4110D3, BTB4511J3, BTB5140N3, BTB5213L3, BTB5240N3, BTB5839M3

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