BTC1510I3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BTC1510I3
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20 W
Tensión colector-base (Vcb): 150 V
Tensión colector-emisor (Vce): 150 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 2000
Paquete / Cubierta: TO251
Búsqueda de reemplazo de transistor bipolar BTC1510I3
BTC1510I3 Datasheet (PDF)
btc1510i3.pdf
Spec. No. : C652I3 Issued Date : 2005.06.23 CYStech Electronics Corp.Revised Date :2009.02.04 Page No. : 1/6 NPN Epitaxial Planar Transistor BVCEO 150VIC 10ABTC1510I3 RCESAT 220m Description The BTC1510I3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: High BVCEO Low VCE(SAT) High
btc1510e3.pdf
Spec. No. : C652E3 Issued Date : 2004.02.01 CYStech Electronics Corp.Revised Date : 2014.05.05 Page No. : 1/6 NPN Epitaxial Planar Transistor BTC1510E3 Description The BTC1510E3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: High BVCEO Low VCE(SAT) High current gain Monolithic construc
btc1510fp.pdf
Spec. No. : C652FP Issued Date : 2005.03.29 CYStech Electronics Corp.Revised Date :2006.06.02 Page No. : 1/5 NPN Epitaxial Planar Transistor BTC1510FP Description The BTC1510FP is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: High BVCEO Low VCE(SAT) High current gain Monolithic construct
btc1510j3.pdf
Spec. No. : C652J3 Issued Date : 2003.05.16 CYStech Electronics Corp.Revised Date :2011.10.26 Page No. : 1/7 NPN Epitaxial Planar Transistor BVCEO 150VIC 10ABTC1510J3 RCESAT 220m Description The BTC1510J3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: High BVCEO Low VCE(SAT) Hig
btc1510f3.pdf
Spec. No. : C652F3 Issued Date : 2004.09.07 CYStech Electronics Corp.Revised Date :2010.05.04 Page No. : 1/5 NPN Epitaxial Planar Transistor BTC1510F3 Description The BTC1510F3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: High BVCEO Low VCE(SAT) High current gain Monolithic construct
btc1510t3.pdf
Spec. No. : C652T3 Issued Date : 2003.09.30 CYStech Electronics Corp.Revised Date :2006.05.24 Page No. : 1/5 NPN Epitaxial Planar Transistor BTC1510T3 Description The BTC1510T3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: High BVCEO Low VCE(SAT) High current gain Monolithic construct
Otros transistores... HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , TIP142 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
History: BTB1236AL3 | 2SAB42 | CL066D
History: BTB1236AL3 | 2SAB42 | CL066D
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050