BTC1510I3 Datasheet and Replacement

Spec. No. : C652I3 Issued Date : 2005.06.23 CYStech Electronics Corp.Revised Date :2009.02.04 Page No. : 1/6 NPN Epitaxial Planar Transistor BVCEO 150VIC 10ABTC1510I3 RCESAT 220m Description The BTC1510I3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: High BVCEO Low VCE(SAT) High

Spec. No. : C652E3 Issued Date : 2004.02.01 CYStech Electronics Corp.Revised Date : 2014.05.05 Page No. : 1/6 NPN Epitaxial Planar Transistor BTC1510E3 Description The BTC1510E3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: High BVCEO Low VCE(SAT) High current gain Monolithic construc

Spec. No. : C652FP Issued Date : 2005.03.29 CYStech Electronics Corp.Revised Date :2006.06.02 Page No. : 1/5 NPN Epitaxial Planar Transistor BTC1510FP Description The BTC1510FP is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: High BVCEO Low VCE(SAT) High current gain Monolithic construct

Spec. No. : C652J3 Issued Date : 2003.05.16 CYStech Electronics Corp.Revised Date :2011.10.26 Page No. : 1/7 NPN Epitaxial Planar Transistor BVCEO 150VIC 10ABTC1510J3 RCESAT 220m Description The BTC1510J3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: High BVCEO Low VCE(SAT) Hig

Spec. No. : C652F3 Issued Date : 2004.09.07 CYStech Electronics Corp.Revised Date :2010.05.04 Page No. : 1/5 NPN Epitaxial Planar Transistor BTC1510F3 Description The BTC1510F3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: High BVCEO Low VCE(SAT) High current gain Monolithic construct

Spec. No. : C652T3 Issued Date : 2003.09.30 CYStech Electronics Corp.Revised Date :2006.05.24 Page No. : 1/5 NPN Epitaxial Planar Transistor BTC1510T3 Description The BTC1510T3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: High BVCEO Low VCE(SAT) High current gain Monolithic construct