BTC1510I3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTC1510I3
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 2000
Noise Figure, dB: -
Package: TO251
BTC1510I3 Transistor Equivalent Substitute - Cross-Reference Search
BTC1510I3 Datasheet (PDF)
btc1510i3.pdf
Spec. No. : C652I3 Issued Date : 2005.06.23 CYStech Electronics Corp.Revised Date :2009.02.04 Page No. : 1/6 NPN Epitaxial Planar Transistor BVCEO 150VIC 10ABTC1510I3 RCESAT 220m Description The BTC1510I3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: High BVCEO Low VCE(SAT) High
btc1510e3.pdf
Spec. No. : C652E3 Issued Date : 2004.02.01 CYStech Electronics Corp.Revised Date : 2014.05.05 Page No. : 1/6 NPN Epitaxial Planar Transistor BTC1510E3 Description The BTC1510E3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: High BVCEO Low VCE(SAT) High current gain Monolithic construc
btc1510fp.pdf
Spec. No. : C652FP Issued Date : 2005.03.29 CYStech Electronics Corp.Revised Date :2006.06.02 Page No. : 1/5 NPN Epitaxial Planar Transistor BTC1510FP Description The BTC1510FP is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: High BVCEO Low VCE(SAT) High current gain Monolithic construct
btc1510j3.pdf
Spec. No. : C652J3 Issued Date : 2003.05.16 CYStech Electronics Corp.Revised Date :2011.10.26 Page No. : 1/7 NPN Epitaxial Planar Transistor BVCEO 150VIC 10ABTC1510J3 RCESAT 220m Description The BTC1510J3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: High BVCEO Low VCE(SAT) Hig
btc1510f3.pdf
Spec. No. : C652F3 Issued Date : 2004.09.07 CYStech Electronics Corp.Revised Date :2010.05.04 Page No. : 1/5 NPN Epitaxial Planar Transistor BTC1510F3 Description The BTC1510F3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: High BVCEO Low VCE(SAT) High current gain Monolithic construct
btc1510t3.pdf
Spec. No. : C652T3 Issued Date : 2003.09.30 CYStech Electronics Corp.Revised Date :2006.05.24 Page No. : 1/5 NPN Epitaxial Planar Transistor BTC1510T3 Description The BTC1510T3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: High BVCEO Low VCE(SAT) High current gain Monolithic construct
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
