BTC1510J3
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BTC1510J3
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20
W
Tensión colector-base (Vcb): 150
V
Tensión colector-emisor (Vce): 150
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 10
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 2000
Paquete / Cubierta:
TO252
Búsqueda de reemplazo de transistor bipolar BTC1510J3
BTC1510J3
Datasheet (PDF)
..1. Size:280K cystek
btc1510j3.pdf 
Spec. No. : C652J3 Issued Date : 2003.05.16 CYStech Electronics Corp.Revised Date :2011.10.26 Page No. : 1/7 NPN Epitaxial Planar Transistor BVCEO 150VIC 10ABTC1510J3 RCESAT 220m Description The BTC1510J3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: High BVCEO Low VCE(SAT) Hig
7.1. Size:227K cystek
btc1510e3.pdf
Spec. No. : C652E3 Issued Date : 2004.02.01 CYStech Electronics Corp.Revised Date : 2014.05.05 Page No. : 1/6 NPN Epitaxial Planar Transistor BTC1510E3 Description The BTC1510E3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: High BVCEO Low VCE(SAT) High current gain Monolithic construc
7.2. Size:172K cystek
btc1510fp.pdf
Spec. No. : C652FP Issued Date : 2005.03.29 CYStech Electronics Corp.Revised Date :2006.06.02 Page No. : 1/5 NPN Epitaxial Planar Transistor BTC1510FP Description The BTC1510FP is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: High BVCEO Low VCE(SAT) High current gain Monolithic construct
7.3. Size:224K cystek
btc1510f3.pdf
Spec. No. : C652F3 Issued Date : 2004.09.07 CYStech Electronics Corp.Revised Date :2010.05.04 Page No. : 1/5 NPN Epitaxial Planar Transistor BTC1510F3 Description The BTC1510F3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: High BVCEO Low VCE(SAT) High current gain Monolithic construct
7.4. Size:222K cystek
btc1510i3.pdf
Spec. No. : C652I3 Issued Date : 2005.06.23 CYStech Electronics Corp.Revised Date :2009.02.04 Page No. : 1/6 NPN Epitaxial Planar Transistor BVCEO 150VIC 10ABTC1510I3 RCESAT 220m Description The BTC1510I3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: High BVCEO Low VCE(SAT) High
7.5. Size:182K cystek
btc1510t3.pdf
Spec. No. : C652T3 Issued Date : 2003.09.30 CYStech Electronics Corp.Revised Date :2006.05.24 Page No. : 1/5 NPN Epitaxial Planar Transistor BTC1510T3 Description The BTC1510T3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: High BVCEO Low VCE(SAT) High current gain Monolithic construct
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