BTC1510J3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTC1510J3
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 2000
Noise Figure, dB: -
Package: TO252
BTC1510J3 Transistor Equivalent Substitute - Cross-Reference Search
BTC1510J3 Datasheet (PDF)
btc1510j3.pdf
Spec. No. : C652J3 Issued Date : 2003.05.16 CYStech Electronics Corp.Revised Date :2011.10.26 Page No. : 1/7 NPN Epitaxial Planar Transistor BVCEO 150VIC 10ABTC1510J3 RCESAT 220m Description The BTC1510J3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: High BVCEO Low VCE(SAT) Hig
btc1510e3.pdf
Spec. No. : C652E3 Issued Date : 2004.02.01 CYStech Electronics Corp.Revised Date : 2014.05.05 Page No. : 1/6 NPN Epitaxial Planar Transistor BTC1510E3 Description The BTC1510E3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: High BVCEO Low VCE(SAT) High current gain Monolithic construc
btc1510fp.pdf
Spec. No. : C652FP Issued Date : 2005.03.29 CYStech Electronics Corp.Revised Date :2006.06.02 Page No. : 1/5 NPN Epitaxial Planar Transistor BTC1510FP Description The BTC1510FP is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: High BVCEO Low VCE(SAT) High current gain Monolithic construct
btc1510f3.pdf
Spec. No. : C652F3 Issued Date : 2004.09.07 CYStech Electronics Corp.Revised Date :2010.05.04 Page No. : 1/5 NPN Epitaxial Planar Transistor BTC1510F3 Description The BTC1510F3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: High BVCEO Low VCE(SAT) High current gain Monolithic construct
btc1510i3.pdf
Spec. No. : C652I3 Issued Date : 2005.06.23 CYStech Electronics Corp.Revised Date :2009.02.04 Page No. : 1/6 NPN Epitaxial Planar Transistor BVCEO 150VIC 10ABTC1510I3 RCESAT 220m Description The BTC1510I3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: High BVCEO Low VCE(SAT) High
btc1510t3.pdf
Spec. No. : C652T3 Issued Date : 2003.09.30 CYStech Electronics Corp.Revised Date :2006.05.24 Page No. : 1/5 NPN Epitaxial Planar Transistor BTC1510T3 Description The BTC1510T3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: High BVCEO Low VCE(SAT) High current gain Monolithic construct
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
