BTC1510T3 Todos los transistores

Spec. No. C652T3 Issued Date 2003.09.30 CYStech Electronics Corp. Revised Date 2006.05.24 Page No. 1/5 NPN Epitaxial Planar Transistor BTC1510T3 Description The BTC1510T3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features High BVCEO Low VCE(SAT) High current gain Monolithic construct

Spec. No. C652E3 Issued Date 2004.02.01 CYStech Electronics Corp. Revised Date 2014.05.05 Page No. 1/6 NPN Epitaxial Planar Transistor BTC1510E3 Description The BTC1510E3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features High BVCEO Low VCE(SAT) High current gain Monolithic construc

Spec. No. C652FP Issued Date 2005.03.29 CYStech Electronics Corp. Revised Date 2006.06.02 Page No. 1/5 NPN Epitaxial Planar Transistor BTC1510FP Description The BTC1510FP is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features High BVCEO Low VCE(SAT) High current gain Monolithic construct

Spec. No. C652J3 Issued Date 2003.05.16 CYStech Electronics Corp. Revised Date 2011.10.26 Page No. 1/7 NPN Epitaxial Planar Transistor BVCEO 150V IC 10A BTC1510J3 RCESAT 220m Description The BTC1510J3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features High BVCEO Low VCE(SAT) Hig

Spec. No. C652F3 Issued Date 2004.09.07 CYStech Electronics Corp. Revised Date 2010.05.04 Page No. 1/5 NPN Epitaxial Planar Transistor BTC1510F3 Description The BTC1510F3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features High BVCEO Low VCE(SAT) High current gain Monolithic construct

Spec. No. C652I3 Issued Date 2005.06.23 CYStech Electronics Corp. Revised Date 2009.02.04 Page No. 1/6 NPN Epitaxial Planar Transistor BVCEO 150V IC 10A BTC1510I3 RCESAT 220m Description The BTC1510I3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features High BVCEO Low VCE(SAT) High