BTC2880A3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Spec. No. : C319A3 Issued Date : 2007.05.04 CYStech Electronics Corp.Revised Date : Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BTC2880A3Description The BTC2880A3 is designed for general purpose medium power amplifier and switching applications. Features Low collector saturation voltage High breakdown voltage, V =100V (min.) CEO High coll

Spec. No. : C319M3G Issued Date : 2007.05.31 CYStech Electronics Corp.Revised Date : 2008.12.22 Page No. : 1/5 General Purpose NPN Epitaxial Planar Transistor BTC2880M3GFeatures High breakdown voltage, BV 120V CEO Large continuous collector current capability Low collector saturation voltage RoHS compliant and Halogen-free package Symbol Outline B

Spec. No. : C319M3 Issued Date : 2007.05.31 CYStech Electronics Corp.Revised Date : 2013.09.23 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BTC2880M3Features High breakdown voltage, BV 120V CEO Large continuous collector current capability Low collector saturation voltage Pb-free package Symbol Outline BTC2880M3 SOT-89 BBase

Spec. No. : C316M3 Issued Date : 2007.03.28 CYStech Electronics Corp.Revised Date : 2013.08.07 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BVCEO 200VBTC2881M3IC 1ARCESAT(MAX) 0.86 Features High breakdown voltage, BV 200V CEO Large continuous collector current capability Low collector saturation voltage Complementary to BTA120

Spec. No. : C238J3 Issued Date : 2010.06.23 CYStech Electronics Corp.Revised Date : 2011.03.08 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BVCEO 200VBTC2882J3IC 1ARCESAT(MAX) 0.6 Features High breakdown voltage, BV 200V CEO Large continuous collector current capability Low collector saturation voltage Pb-free lead plating an

Spec. No. : C316L3 Issued Date : 2010.12.29 CYStech Electronics Corp.Revised Date : 2011.01.03 Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BVCEO 200VBTC2881L3IC 1ARCESAT(MAX) 0.86 Features High breakdown voltage, BV 200V CEO Large continuous collector current capability Low collector saturation voltage Pb-free lead plating an

Spec. No. : C316E3 Issued Date : 2010.01.22 CYStech Electronics Corp.Revised Date : 2010.09.28 Page No. : 1/5 Silicon NPN Epitaxial Planar Transistor BVCEO 200VBTC2881E3IC 1ARCESAT(MAX) 0.86 Description High breakdown voltage, BV 200V CEO Large continuous collector current capability Low collector saturation voltage RoHS compliant package Sy

Spec. No. : C316FP Issued Date : 2010.09.23 CYStech Electronics Corp.Revised Date : 2010.09.28 Page No. : 1/5 Silicon NPN Epitaxial Planar Transistor BVCEO 200VBTC2881FPIC 1ARCESAT(MAX) 0.86 Description High breakdown voltage, BV 200V CEO Large continuous collector current capability Low collector saturation voltage RoHS compliant package Sy

Spec. No. : C316J3 Issued Date : 2009.11.17 CYStech Electronics Corp.Revised Date : 2010.12.08 Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BVCEO 200VBTC2881J3IC 1ARCESAT(MAX) 0.86 Features High breakdown voltage, BV 200V CEO Large continuous collector current capability Low collector saturation voltage Pb-free lead plating a

Spec. No. : C239J3 Issued Date : 2010.06.23 CYStech Electronics Corp.Revised Date : 2011.03.08 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BVCEO 240VBTC2883J3IC 1.2ARCESAT(MAX) 0.6 Features High breakdown voltage, BV 240V CEO Large continuous collector current capability Low collector saturation voltage Pb-free lead plating