BTC2880A3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTC2880A3
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.85 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 82
Noise Figure, dB: -
Package: TO92
BTC2880A3 Transistor Equivalent Substitute - Cross-Reference Search
BTC2880A3 Datasheet (PDF)
btc2880a3.pdf
Spec. No. : C319A3 Issued Date : 2007.05.04 CYStech Electronics Corp.Revised Date : Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BTC2880A3Description The BTC2880A3 is designed for general purpose medium power amplifier and switching applications. Features Low collector saturation voltage High breakdown voltage, V =100V (min.) CEO High coll
btc2880m3g.pdf
Spec. No. : C319M3G Issued Date : 2007.05.31 CYStech Electronics Corp.Revised Date : 2008.12.22 Page No. : 1/5 General Purpose NPN Epitaxial Planar Transistor BTC2880M3GFeatures High breakdown voltage, BV 120V CEO Large continuous collector current capability Low collector saturation voltage RoHS compliant and Halogen-free package Symbol Outline B
btc2880m3.pdf
Spec. No. : C319M3 Issued Date : 2007.05.31 CYStech Electronics Corp.Revised Date : 2013.09.23 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BTC2880M3Features High breakdown voltage, BV 120V CEO Large continuous collector current capability Low collector saturation voltage Pb-free package Symbol Outline BTC2880M3 SOT-89 BBase
btc2881m3.pdf
Spec. No. : C316M3 Issued Date : 2007.03.28 CYStech Electronics Corp.Revised Date : 2013.08.07 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BVCEO 200VBTC2881M3IC 1ARCESAT(MAX) 0.86 Features High breakdown voltage, BV 200V CEO Large continuous collector current capability Low collector saturation voltage Complementary to BTA120
btc2882j3.pdf
Spec. No. : C238J3 Issued Date : 2010.06.23 CYStech Electronics Corp.Revised Date : 2011.03.08 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BVCEO 200VBTC2882J3IC 1ARCESAT(MAX) 0.6 Features High breakdown voltage, BV 200V CEO Large continuous collector current capability Low collector saturation voltage Pb-free lead plating an
btc2881l3.pdf
Spec. No. : C316L3 Issued Date : 2010.12.29 CYStech Electronics Corp.Revised Date : 2011.01.03 Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BVCEO 200VBTC2881L3IC 1ARCESAT(MAX) 0.86 Features High breakdown voltage, BV 200V CEO Large continuous collector current capability Low collector saturation voltage Pb-free lead plating an
btc2881e3.pdf
Spec. No. : C316E3 Issued Date : 2010.01.22 CYStech Electronics Corp.Revised Date : 2010.09.28 Page No. : 1/5 Silicon NPN Epitaxial Planar Transistor BVCEO 200VBTC2881E3IC 1ARCESAT(MAX) 0.86 Description High breakdown voltage, BV 200V CEO Large continuous collector current capability Low collector saturation voltage RoHS compliant package Sy
btc2881fp.pdf
Spec. No. : C316FP Issued Date : 2010.09.23 CYStech Electronics Corp.Revised Date : 2010.09.28 Page No. : 1/5 Silicon NPN Epitaxial Planar Transistor BVCEO 200VBTC2881FPIC 1ARCESAT(MAX) 0.86 Description High breakdown voltage, BV 200V CEO Large continuous collector current capability Low collector saturation voltage RoHS compliant package Sy
btc2881j3.pdf
Spec. No. : C316J3 Issued Date : 2009.11.17 CYStech Electronics Corp.Revised Date : 2010.12.08 Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BVCEO 200VBTC2881J3IC 1ARCESAT(MAX) 0.86 Features High breakdown voltage, BV 200V CEO Large continuous collector current capability Low collector saturation voltage Pb-free lead plating a
btc2883j3.pdf
Spec. No. : C239J3 Issued Date : 2010.06.23 CYStech Electronics Corp.Revised Date : 2011.03.08 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BVCEO 240VBTC2883J3IC 1.2ARCESAT(MAX) 0.6 Features High breakdown voltage, BV 240V CEO Large continuous collector current capability Low collector saturation voltage Pb-free lead plating
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: 2SA1037-Q | NSBC114YPDXV6T5G | KST5551 | 2SA100
History: 2SA1037-Q | NSBC114YPDXV6T5G | KST5551 | 2SA100
LIST
Last Update
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050