BTC3906M3 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BTC3906M3

Código: G1

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 2 W

Tensión colector-base (Vcb): 180 V

Tensión colector-emisor (Vce): 160 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 6 pF

Ganancia de corriente contínua (hFE): 120

Encapsulados: SOT89

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BTC3906M3 datasheet

 ..1. Size:246K  cystek
 btc3906m3.pdf pdf_icon

BTC3906M3

Spec. No. C208M3 Issued Date 2003.08.18 CYStech Electronics Corp. Revised Date 2013.08.05 Page No. 1/7 General Purpose NPN Epitaxial Planar Transistor BTC3906M3 Description The BTC3906M3 is designed for general purpose applications requiring high breakdown voltage. Features High collector-emitter breakdown voltage. (BV =160V @ I =1mA) CEO C Complement to BTA

 7.1. Size:271K  cystek
 btc3906n3.pdf pdf_icon

BTC3906M3

Spec. No. C208N3G Issued Date 2002.05.11 CYStech Electronics Corp. Revised Date 2013.05.08 Page No. 1/7 General Purpose NPN Epitaxial Planar Transistor BTC3906N3 Description The BTC3906N3 is designed for general purpose applications requiring high breakdown voltage. Features High collector-emitter breakdown voltage. (BV =160V @ I =1mA) CEO C Complement to B

 7.2. Size:269K  cystek
 btc3906l3.pdf pdf_icon

BTC3906M3

Spec. No. C208L3 Issued Date 2004.09.21 CYStech Electronics Corp. Revised Date 2013.10.25 Page No. 1/8 General Purpose NPN Epitaxial Planar Transistor BTC3906L3 Features High collector-emitter breakdown voltage. (BV =160V @ I =1mA) CEO C Complement to BTA1514L3. Pb-free lead plating and halogen-free package. Symbol Outline BTC3906L3 SOT-223 C E

 7.3. Size:266K  cystek
 btc3906s3.pdf pdf_icon

BTC3906M3

MOSTRAR MÁS

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