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BTC3906M3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BTC3906M3
   Código: G1
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 2 W
   Tensión colector-base (Vcb): 180 V
   Tensión colector-emisor (Vce): 160 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.6 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 6 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: SOT89
 

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BTC3906M3 Datasheet (PDF)

 ..1. Size:246K  cystek
 btc3906m3.pdf pdf_icon

BTC3906M3

Spec. No. : C208M3 Issued Date : 2003.08.18 CYStech Electronics Corp.Revised Date :2013.08.05 Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BTC3906M3Description The BTC3906M3 is designed for general purpose applications requiring high breakdown voltage. Features High collector-emitter breakdown voltage. (BV =160V @ I =1mA) CEO C Complement to BTA

 7.1. Size:271K  cystek
 btc3906n3.pdf pdf_icon

BTC3906M3

Spec. No. : C208N3G Issued Date : 2002.05.11 CYStech Electronics Corp.Revised Date : 2013.05.08 Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BTC3906N3Description The BTC3906N3 is designed for general purpose applications requiring high breakdown voltage. Features High collector-emitter breakdown voltage. (BV =160V @ I =1mA) CEO C Complement to B

 7.2. Size:269K  cystek
 btc3906l3.pdf pdf_icon

BTC3906M3

Spec. No. : C208L3 Issued Date : 2004.09.21 CYStech Electronics Corp.Revised Date : 2013.10.25 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor BTC3906L3Features High collector-emitter breakdown voltage. (BV =160V @ I =1mA) CEO C Complement to BTA1514L3. Pb-free lead plating and halogen-free package. Symbol Outline BTC3906L3 SOT-223 C E

 7.3. Size:266K  cystek
 btc3906s3.pdf pdf_icon

BTC3906M3

Spec. No. : C208S3 Issued Date : 2013.05.14 CYStech Electronics Corp.Revised Date : Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BTC3906S3Description The BTC3906S3 is designed for general purpose applications requiring high breakdown voltage. Features High collector-emitter breakdown voltage. (BV =160V @ I =1mA) CEO C Complement to BTA1514S3

MOSTRAR MÁS

Otros transistores... BTC2882J3 , BTC2883J3 , BTC3097T3 , BTC3149E3 , BTC3356N3 , BTC3415A3 , BTC3838N3 , BTC3906L3 , 2N4401 , BTC3906N3 , BTC3906N3G , BTC3906S3 , BTC4061N3 , BTC4081S3 , BTC4082S3 , BTC4083S3 , BTC4226S3 .

History: BUL51B | 2SC2632 | ECG365 | 2SB373 | RN2705 | P207

 

 
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