All Transistors. BTC3906M3 Datasheet

 

BTC3906M3 Datasheet and Replacement


   Type Designator: BTC3906M3
   SMD Transistor Code: G1
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT89
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BTC3906M3 Datasheet (PDF)

 ..1. Size:246K  cystek
 btc3906m3.pdf pdf_icon

BTC3906M3

Spec. No. : C208M3 Issued Date : 2003.08.18 CYStech Electronics Corp.Revised Date :2013.08.05 Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BTC3906M3Description The BTC3906M3 is designed for general purpose applications requiring high breakdown voltage. Features High collector-emitter breakdown voltage. (BV =160V @ I =1mA) CEO C Complement to BTA

 7.1. Size:271K  cystek
 btc3906n3.pdf pdf_icon

BTC3906M3

Spec. No. : C208N3G Issued Date : 2002.05.11 CYStech Electronics Corp.Revised Date : 2013.05.08 Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BTC3906N3Description The BTC3906N3 is designed for general purpose applications requiring high breakdown voltage. Features High collector-emitter breakdown voltage. (BV =160V @ I =1mA) CEO C Complement to B

 7.2. Size:269K  cystek
 btc3906l3.pdf pdf_icon

BTC3906M3

Spec. No. : C208L3 Issued Date : 2004.09.21 CYStech Electronics Corp.Revised Date : 2013.10.25 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor BTC3906L3Features High collector-emitter breakdown voltage. (BV =160V @ I =1mA) CEO C Complement to BTA1514L3. Pb-free lead plating and halogen-free package. Symbol Outline BTC3906L3 SOT-223 C E

 7.3. Size:266K  cystek
 btc3906s3.pdf pdf_icon

BTC3906M3

Spec. No. : C208S3 Issued Date : 2013.05.14 CYStech Electronics Corp.Revised Date : Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BTC3906S3Description The BTC3906S3 is designed for general purpose applications requiring high breakdown voltage. Features High collector-emitter breakdown voltage. (BV =160V @ I =1mA) CEO C Complement to BTA1514S3

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