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BTC3906N3G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BTC3906N3G
   Código: G1
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.56 W
   Tensión colector-base (Vcb): 180 V
   Tensión colector-emisor (Vce): 160 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.6 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 6 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: SOT23
 

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BTC3906N3G Datasheet (PDF)

 ..1. Size:174K  cystek
 btc3906n3g.pdf pdf_icon

BTC3906N3G

Spec. No. : C208N3G Issued Date : 2008.12.11 CYStech Electronics Corp.Revised Date : Page No. : 1/5 General Purpose NPN Epitaxial Planar Transistor BTC3906N3GDescription The BTC3906N3G is designed for general purpose applications requiring high breakdown voltage. Features High collector-emitter breakdown voltage. (BV =160V @ I =1mA) CEO C Complement to BTA1514N3G

 5.1. Size:271K  cystek
 btc3906n3.pdf pdf_icon

BTC3906N3G

Spec. No. : C208N3G Issued Date : 2002.05.11 CYStech Electronics Corp.Revised Date : 2013.05.08 Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BTC3906N3Description The BTC3906N3 is designed for general purpose applications requiring high breakdown voltage. Features High collector-emitter breakdown voltage. (BV =160V @ I =1mA) CEO C Complement to B

 7.1. Size:269K  cystek
 btc3906l3.pdf pdf_icon

BTC3906N3G

Spec. No. : C208L3 Issued Date : 2004.09.21 CYStech Electronics Corp.Revised Date : 2013.10.25 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor BTC3906L3Features High collector-emitter breakdown voltage. (BV =160V @ I =1mA) CEO C Complement to BTA1514L3. Pb-free lead plating and halogen-free package. Symbol Outline BTC3906L3 SOT-223 C E

 7.2. Size:266K  cystek
 btc3906s3.pdf pdf_icon

BTC3906N3G

Spec. No. : C208S3 Issued Date : 2013.05.14 CYStech Electronics Corp.Revised Date : Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BTC3906S3Description The BTC3906S3 is designed for general purpose applications requiring high breakdown voltage. Features High collector-emitter breakdown voltage. (BV =160V @ I =1mA) CEO C Complement to BTA1514S3

MOSTRAR MÁS

Otros transistores... BTC3097T3 , BTC3149E3 , BTC3356N3 , BTC3415A3 , BTC3838N3 , BTC3906L3 , BTC3906M3 , BTC3906N3 , 8550 , BTC3906S3 , BTC4061N3 , BTC4081S3 , BTC4082S3 , BTC4083S3 , BTC4226S3 , BTC4401A3 , BTC4505A3 .

History: BCF39C

 

 
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