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BTC5706A3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BTC5706A3
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.8 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 400 MHz
   Capacitancia de salida (Cc): 15 pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: TO92
 

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BTC5706A3 Datasheet (PDF)

 ..1. Size:177K  cystek
 btc5706a3.pdf pdf_icon

BTC5706A3

Spec. No. : C819A3 Issued Date : 2006.06.06 CYStech Electronics Corp.Revised Date : Page No. : 1/ 5 Low Vcesat NPN Epitaxial Planar Transistor BTC5706A3 Features Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipation Large current capability Pb-free package Applications DC-DC converter, relay drivers,

 7.1. Size:155K  cystek
 btc5706j3.pdf pdf_icon

BTC5706A3

Spec. No. : C819J3 Issued Date : 2004.12.18 CYStech Electronics Corp. Revised Date : Page No. : 1/5 Low Vcesat NPN Epitaxial Planar Transistor BTC5706J3 Features Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipation Large current capability Applications DC-DC converter, relay drivers, lamp drivers, motor

 7.2. Size:254K  cystek
 btc5706i3.pdf pdf_icon

BTC5706A3

Spec. No. : C819I3 Issued Date : 2004.12.16 CYStech Electronics Corp.Revised Date :2011.11.18 Page No. : 1/7 Low Vcesat NPN Epitaxial Planar Transistor BTC5706I3 Features Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipation Large current capability RoHS compliant package Applications DC-DC converter

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History: 2SC354

 

 
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