BTC5706A3 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BTC5706A3  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.8 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 400 MHz

Capacitancia de salida (Cc): 15 pF

Ganancia de corriente contínua (hFE): 200

Encapsulados: TO92

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BTC5706A3 datasheet

 ..1. Size:177K  cystek
 btc5706a3.pdf pdf_icon

BTC5706A3

Spec. No. C819A3 Issued Date 2006.06.06 CYStech Electronics Corp. Revised Date Page No. 1/ 5 Low Vcesat NPN Epitaxial Planar Transistor BTC5706A3 Features Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipation Large current capability Pb-free package Applications DC-DC converter, relay drivers,

 7.1. Size:155K  cystek
 btc5706j3.pdf pdf_icon

BTC5706A3

Spec. No. C819J3 Issued Date 2004.12.18 CYStech Electronics Corp. Revised Date Page No. 1/5 Low Vcesat NPN Epitaxial Planar Transistor BTC5706J3 Features Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipation Large current capability Applications DC-DC converter, relay drivers, lamp drivers, motor

 7.2. Size:254K  cystek
 btc5706i3.pdf pdf_icon

BTC5706A3

Spec. No. C819I3 Issued Date 2004.12.16 CYStech Electronics Corp. Revised Date 2011.11.18 Page No. 1/7 Low Vcesat NPN Epitaxial Planar Transistor BTC5706I3 Features Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipation Large current capability RoHS compliant package Applications DC-DC converter

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