BTD882I3 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BTD882I3

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 10 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 90 MHz

Capacitancia de salida (Cc): 45 pF

Ganancia de corriente contínua (hFE): 180

Encapsulados: TO251

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BTD882I3 datasheet

 ..1. Size:225K  cystek
 btd882i3.pdf pdf_icon

BTD882I3

Spec. No. C848I3-H Issued Date 2003.04.02 CYStech Electronics Corp. Revised Date 2010.11.05 Page No. 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 30V IC 3A BTD882I3 RCESAT 125m typ. Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772I3 RoHS compliant package Symb

 8.1. Size:302K  cystek
 btd882j3.pdf pdf_icon

BTD882I3

Spec. No. C848J3-H Issued Date 2003.04.02 CYStech Electronics Corp. Revised Date 2013.03.12 Page No. 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 50V IC 3A BTD882J3 RCESAT (Typ) 125m Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772J3 Pb-free package Symbol Outli

 8.2. Size:320K  cystek
 btd882t3.pdf pdf_icon

BTD882I3

Spec. No. C848T3-H Issued Date 2002.08.18 CYStech Electronics Corp. Revised Date 2014.03.17 Page No. 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 30V IC 3A BTD882T3 RCESAT (Typ) 125m Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772T3 Pb-free package Symbol Out

 8.3. Size:246K  cystek
 btd882am3.pdf pdf_icon

BTD882I3

Spec. No. C848M3-H Issued Date 2003.06.17 CYStech Electronics Corp. Revised Date 2013.08.12 Page No. 1/7 Low V NPN Epitaxial Planar Transistor CE(sat) BVCEO 50V IC 3A BTD882AM3 RCESAT (Typ) 125m Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772AM3 Pb-free lead plating p

MOSTRAR MÁS

Otros transistores... BTC5706A3, BTC5706I3, BTC5706J3, BTC9013A3, BTC9014A3, BTD142F3, BTD882AM3, BTD882D3, D882P, BTD882J3, BTD882SA3, BTD882ST3, BTD882T3, BTD965A3, BTD965LA3, BTD965N3, BTD1304A3