BTD965A3 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BTD965A3

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.75 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 20 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 150 MHz

Capacitancia de salida (Cc): 50 pF

Ganancia de corriente contínua (hFE): 300

Encapsulados: TO92

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BTD965A3 datasheet

 ..1. Size:236K  cystek
 btd965a3.pdf pdf_icon

BTD965A3

Spec. No. C847A3 Issued Date 2003.04.01 CYStech Electronics Corp. Revised Date 2011.02.14 Page No. 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 20V IC 5A BTD965A3 RCESAT(typ) 0.12 Features Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A Excellent DC current gain characteristics Complementary to BTB1386A3 Pb-free package

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 btd965la3.pdf pdf_icon

BTD965A3

Spec. No. C852A3 Issued Date 2004.07.02 CYStech Electronics Corp. Revised Date 2007.04.18 Page No. 1/5 Low VCE(sat) NPN Planar Transistor BTD965LA3 Features High current capability Low collector-to-emitter saturation voltage High allowable power dissipation Pb-free package Applications Relay drivers, lamp drivers, motor drivers, strobes Sy

 8.2. Size:246K  cystek
 btd965n3.pdf pdf_icon

BTD965A3

Spec. No. C847N3 Issued Date 2003.07.02 CYStech Electronics Corp. Revised Date 2013.01.03 Page No. 1/6 Low Vcesat NPN Epitaxial Planar Transistor BTD965N3 Features Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A Excellent DC current gain characteristics Complementary to BTB1386N3 Symbol Outline BTD965N3 SOT-23 B Base C Collector

Otros transistores... BTD142F3, BTD882AM3, BTD882D3, BTD882I3, BTD882J3, BTD882SA3, BTD882ST3, BTD882T3, D667, BTD965LA3, BTD965N3, BTD1304A3, BTD1304N3, BTD1383L3, BTD1383M3, BTD1616AA3, BTD1616AM3