BTD965A3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTD965A3
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 300
Noise Figure, dB: -
Package: TO92
BTD965A3 Transistor Equivalent Substitute - Cross-Reference Search
BTD965A3 Datasheet (PDF)
btd965a3.pdf
Spec. No. : C847A3 Issued Date : 2003.04.01 CYStech Electronics Corp.Revised Date :2011.02.14 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 20VIC 5ABTD965A3 RCESAT(typ) 0.12 Features Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A Excellent DC current gain characteristics Complementary to BTB1386A3 Pb-free package
btd965la3.pdf
Spec. No. : C852A3 Issued Date : 2004.07.02 CYStech Electronics Corp.Revised Date : 2007.04.18 Page No. : 1/5 Low VCE(sat) NPN Planar Transistor BTD965LA3 Features High current capability Low collector-to-emitter saturation voltage High allowable power dissipation Pb-free package Applications Relay drivers, lamp drivers, motor drivers, strobes Sy
btd965n3.pdf
Spec. No. : C847N3 Issued Date : 2003.07.02 CYStech Electronics Corp.Revised Date :2013.01.03 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BTD965N3 Features Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A Excellent DC current gain characteristics Complementary to BTB1386N3 Symbol Outline BTD965N3 SOT-23 BBase CCollector
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
