BTD965A3 Datasheet and Replacement
Type Designator: BTD965A3
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 300
Noise Figure, dB: -
Package: TO92
BTD965A3 Substitution
BTD965A3 Datasheet (PDF)
btd965a3.pdf

Spec. No. : C847A3 Issued Date : 2003.04.01 CYStech Electronics Corp.Revised Date :2011.02.14 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 20VIC 5ABTD965A3 RCESAT(typ) 0.12 Features Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A Excellent DC current gain characteristics Complementary to BTB1386A3 Pb-free package
btd965la3.pdf

Spec. No. : C852A3 Issued Date : 2004.07.02 CYStech Electronics Corp.Revised Date : 2007.04.18 Page No. : 1/5 Low VCE(sat) NPN Planar Transistor BTD965LA3 Features High current capability Low collector-to-emitter saturation voltage High allowable power dissipation Pb-free package Applications Relay drivers, lamp drivers, motor drivers, strobes Sy
btd965n3.pdf

Spec. No. : C847N3 Issued Date : 2003.07.02 CYStech Electronics Corp.Revised Date :2013.01.03 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BTD965N3 Features Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A Excellent DC current gain characteristics Complementary to BTB1386N3 Symbol Outline BTD965N3 SOT-23 BBase CCollector
Datasheet: BTD142F3 , BTD882AM3 , BTD882D3 , BTD882I3 , BTD882J3 , BTD882SA3 , BTD882ST3 , BTD882T3 , S9018 , BTD965LA3 , BTD965N3 , BTD1304A3 , BTD1304N3 , BTD1383L3 , BTD1383M3 , BTD1616AA3 , BTD1616AM3 .
History: KT807B | 3DA80C | 2SD1556
Keywords - BTD965A3 transistor datasheet
BTD965A3 cross reference
BTD965A3 equivalent finder
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History: KT807B | 3DA80C | 2SD1556



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