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BTD1664M3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BTD1664M3
   Código: BS
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 2 W
   Tensión colector-base (Vcb): 42 V
   Tensión colector-emisor (Vce): 25 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 150 MHz
   Capacitancia de salida (Cc): 15 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: SOT89
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BTD1664M3 Datasheet (PDF)

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 btd1664m3.pdf pdf_icon

BTD1664M3

Spec. No. : C223M3 Issued Date : 2003.05.26 CYStech Electronics Corp.Revised Date :2013.08.07 Page No. : 1/8 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 25VIC 1.5ABTD1664M3 RCESAT 0.31(typ.) Features The BTD1664M3 is designed for general purpose low frequency power amplifier applications. Low VCE(sat), VCE(sat)=0.15V (typical), at IC / IB = 400mA / 20mA

 9.1. Size:304K  cystek
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BTD1664M3

Spec. No. : C602M3 Issued Date : 2009.04.01 CYStech Electronics Corp.Revised Date :2014.03.28 Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BVCEO 60VBTD1616AM3IC 3AVCESAT(max) 150mV Features High breakdown voltage, BV 60V CEO Large continuous collector current capability Low collector saturation voltage Pb-free lead plating and h

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BTD1664M3

Spec. No. : C602A3 Issued Date : 2009.05.14 CYStech Electronics Corp.Revised Date : Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BVCEO 60VBTD1616AA3IC 1ARCESAT(max) 300m Features High breakdown voltage, BV 60V CEO Large continuous collector current capability Low collector saturation voltage Pb-free and Halogen-free package

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