BTD1664M3 Specs and Replacement

Type Designator: BTD1664M3

SMD Transistor Code: BS

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2 W

Maximum Collector-Base Voltage |Vcb|: 42 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 15 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT89

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BTD1664M3 datasheet

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 btd1664m3.pdf pdf_icon

BTD1664M3

Spec. No. C223M3 Issued Date 2003.05.26 CYStech Electronics Corp. Revised Date 2013.08.07 Page No. 1/8 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 25V IC 1.5A BTD1664M3 RCESAT 0.31 (typ.) Features The BTD1664M3 is designed for general purpose low frequency power amplifier applications. Low VCE(sat), VCE(sat)=0.15V (typical), at IC / IB = 400mA / 20mA ... See More ⇒

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BTD1664M3

Spec. No. C602M3 Issued Date 2009.04.01 CYStech Electronics Corp. Revised Date 2014.03.28 Page No. 1/7 General Purpose NPN Epitaxial Planar Transistor BVCEO 60V BTD1616AM3 IC 3A VCESAT(max) 150mV Features High breakdown voltage, BV 60V CEO Large continuous collector current capability Low collector saturation voltage Pb-free lead plating and h... See More ⇒

 9.2. Size:248K  cystek

 btd1616aa3.pdf pdf_icon

BTD1664M3

Spec. No. C602A3 Issued Date 2009.05.14 CYStech Electronics Corp. Revised Date Page No. 1/7 General Purpose NPN Epitaxial Planar Transistor BVCEO 60V BTD1616AA3 IC 1A RCESAT(max) 300m Features High breakdown voltage, BV 60V CEO Large continuous collector current capability Low collector saturation voltage Pb-free and Halogen-free package ... See More ⇒

Detailed specifications: BTD965LA3, BTD965N3, BTD1304A3, BTD1304N3, BTD1383L3, BTD1383M3, BTD1616AA3, BTD1616AM3, 2N2222, BTD1760J3, BTD1766M3, BTD1768A3, BTD1768BA3, BTD1768M3, BTD1768N3, BTD1768S3, BTD1782N3

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