BTD1766M3
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BTD1766M3
Código: MAB
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 2
W
Tensión colector-base (Vcb): 60
V
Tensión colector-emisor (Vce): 32
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 2
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 270
MHz
Capacitancia de salida (Cc): 16
pF
Ganancia de corriente contínua (hfe): 180
Paquete / Cubierta:
SOT89
Búsqueda de reemplazo de transistor bipolar BTD1766M3
BTD1766M3
Datasheet (PDF)
..1. Size:256K cystek
btd1766m3.pdf 
Spec. No. : C858M3 Issued Date : 2011.12.20 CYStech Electronics Corp.Revised Date : 2013.08.12 Page No. : 1/8 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 32VIC 2ABTD1766M3 RCESAT(typ) 150m Features Low VCE(sat), 0.3V typ. at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB1188M3 Pb-free lead plating and halogen-fr
8.1. Size:243K cystek
btd1768ba3.pdf
Spec. No. : C304A3-B Issued Date : 2006.08.21 CYStech Electronics Corp.Revised Date :2010.07.02 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BTD1768BA3Description The BTD1768BA3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features Low collector saturation voltage High breakdown voltage, V =80
8.2. Size:255K cystek
btd1768n3.pdf
Spec. No. : C304N3 Issued Date : 2005.01.10 CYStech Electronics Corp.Revised Date :2010.10.20 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BTD1768N3Description The BTD1768N3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features Low collector saturation voltage High breakdown voltage, V =80V (m
8.3. Size:218K cystek
btd1760j3.pdf
Spec. No. : C848J3 Issued Date : 2003.04.18 CYStech Electronics Corp.Revised Date : 2010.12.08 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 50V IC 3ABTD1760J3 RCESAT 125m typ.Features Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB1184J3 Pb-free package
8.4. Size:248K cystek
btd1768a3.pdf
Spec. No. : C304A3 Issued Date : 2003.07.28 CYStech Electronics Corp.Revised Date :2012.12.27 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BTD1768A3Description The BTD1768A3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features Low collector saturation voltage High breakdown voltage, V =80V (m
8.5. Size:232K cystek
btd1768m3.pdf
Spec. No. : C310M3 Issued Date : 2007.01.10 CYStech Electronics Corp.Revised Date : 2013.08.07 Page No. : 1/6 NPN Epitaxial Planar Transistor BTD1768M3 Features High VCEO, VCEO=80V High IC, IC(DC)=1A Low VCE(sat) Good current gain linearity Complementary to BTB1198M3 Pb-free lead plating Symbol Outline BTD1768M3 SOT-89 BBase B C E
8.6. Size:258K cystek
btd1768s3.pdf
Spec. No. : C304S3 Issued Date : 2009.11.19 CYStech Electronics Corp.Revised Date : Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BVCEO 80VIC 1ABTD1768S3RCESAT(MAX) 0.5 Description The BTD1768S3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features Low collector saturation voltage High
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