BTD1766M3 PDF and Equivalents Search

 

BTD1766M3 Specs and Replacement

Type Designator: BTD1766M3

SMD Transistor Code: MAB

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 32 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 270 MHz

Collector Capacitance (Cc): 16 pF

Forward Current Transfer Ratio (hFE), MIN: 180

Noise Figure, dB: -

Package: SOT89

 BTD1766M3 Substitution

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BTD1766M3 datasheet

 ..1. Size:256K  cystek

btd1766m3.pdf pdf_icon

BTD1766M3

Spec. No. C858M3 Issued Date 2011.12.20 CYStech Electronics Corp. Revised Date 2013.08.12 Page No. 1/8 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 32V IC 2A BTD1766M3 RCESAT(typ) 150m Features Low VCE(sat), 0.3V typ. at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB1188M3 Pb-free lead plating and halogen-fr... See More ⇒

 8.1. Size:243K  cystek

btd1768ba3.pdf pdf_icon

BTD1766M3

Spec. No. C304A3-B Issued Date 2006.08.21 CYStech Electronics Corp. Revised Date 2010.07.02 Page No. 1/6 General Purpose NPN Epitaxial Planar Transistor BTD1768BA3 Description The BTD1768BA3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features Low collector saturation voltage High breakdown voltage, V =80... See More ⇒

 8.2. Size:255K  cystek

btd1768n3.pdf pdf_icon

BTD1766M3

Spec. No. C304N3 Issued Date 2005.01.10 CYStech Electronics Corp. Revised Date 2010.10.20 Page No. 1/6 General Purpose NPN Epitaxial Planar Transistor BTD1768N3 Description The BTD1768N3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features Low collector saturation voltage High breakdown voltage, V =80V (m... See More ⇒

 8.3. Size:218K  cystek

btd1760j3.pdf pdf_icon

BTD1766M3

Spec. No. C848J3 Issued Date 2003.04.18 CYStech Electronics Corp. Revised Date 2010.12.08 Page No. 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 50V IC 3A BTD1760J3 RCESAT 125m typ. Features Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB1184J3 Pb-free package ... See More ⇒

Detailed specifications: BTD1304A3, BTD1304N3, BTD1383L3, BTD1383M3, BTD1616AA3, BTD1616AM3, BTD1664M3, BTD1760J3, C945, BTD1768A3, BTD1768BA3, BTD1768M3, BTD1768N3, BTD1768S3, BTD1782N3, BTD1805AD3, BTD1805BT3

Keywords - BTD1766M3 pdf specs

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