BTD1768S3
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BTD1768S3
Código: AJ
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2
W
Tensión colector-base (Vcb): 180
V
Tensión colector-emisor (Vce): 80
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250
MHz
Capacitancia de salida (Cc): 6
pF
Ganancia de corriente contínua (hfe): 180
Paquete / Cubierta:
SOT323
Búsqueda de reemplazo de transistor bipolar BTD1768S3
BTD1768S3
Datasheet (PDF)
..1. Size:258K cystek
btd1768s3.pdf 
Spec. No. : C304S3 Issued Date : 2009.11.19 CYStech Electronics Corp.Revised Date : Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BVCEO 80VIC 1ABTD1768S3RCESAT(MAX) 0.5 Description The BTD1768S3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features Low collector saturation voltage High
7.1. Size:243K cystek
btd1768ba3.pdf
Spec. No. : C304A3-B Issued Date : 2006.08.21 CYStech Electronics Corp.Revised Date :2010.07.02 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BTD1768BA3Description The BTD1768BA3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features Low collector saturation voltage High breakdown voltage, V =80
7.2. Size:255K cystek
btd1768n3.pdf
Spec. No. : C304N3 Issued Date : 2005.01.10 CYStech Electronics Corp.Revised Date :2010.10.20 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BTD1768N3Description The BTD1768N3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features Low collector saturation voltage High breakdown voltage, V =80V (m
7.3. Size:248K cystek
btd1768a3.pdf
Spec. No. : C304A3 Issued Date : 2003.07.28 CYStech Electronics Corp.Revised Date :2012.12.27 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BTD1768A3Description The BTD1768A3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features Low collector saturation voltage High breakdown voltage, V =80V (m
7.4. Size:232K cystek
btd1768m3.pdf
Spec. No. : C310M3 Issued Date : 2007.01.10 CYStech Electronics Corp.Revised Date : 2013.08.07 Page No. : 1/6 NPN Epitaxial Planar Transistor BTD1768M3 Features High VCEO, VCEO=80V High IC, IC(DC)=1A Low VCE(sat) Good current gain linearity Complementary to BTB1198M3 Pb-free lead plating Symbol Outline BTD1768M3 SOT-89 BBase B C E
Otros transistores... 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, 2SA1804R
, 2SA1805
, 2SA1805O
, 2SA1805R
, TIP42
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
, 2SA1811
, 2SA1815
, 2SA1815-3
, 2SA1815-4
.
