BTD1768S3 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BTD1768S3
Código: AJ
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 180 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 250 MHz
Capacitancia de salida (Cc): 6 pF
Ganancia de corriente contínua (hFE): 180
Encapsulados: SOT323
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BTD1768S3 datasheet
btd1768s3.pdf
Spec. No. C304S3 Issued Date 2009.11.19 CYStech Electronics Corp. Revised Date Page No. 1/6 General Purpose NPN Epitaxial Planar Transistor BVCEO 80V IC 1A BTD1768S3 RCESAT(MAX) 0.5 Description The BTD1768S3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features Low collector saturation voltage High
btd1768ba3.pdf
Spec. No. C304A3-B Issued Date 2006.08.21 CYStech Electronics Corp. Revised Date 2010.07.02 Page No. 1/6 General Purpose NPN Epitaxial Planar Transistor BTD1768BA3 Description The BTD1768BA3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features Low collector saturation voltage High breakdown voltage, V =80
btd1768n3.pdf
Spec. No. C304N3 Issued Date 2005.01.10 CYStech Electronics Corp. Revised Date 2010.10.20 Page No. 1/6 General Purpose NPN Epitaxial Planar Transistor BTD1768N3 Description The BTD1768N3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features Low collector saturation voltage High breakdown voltage, V =80V (m
btd1768a3.pdf
Spec. No. C304A3 Issued Date 2003.07.28 CYStech Electronics Corp. Revised Date 2012.12.27 Page No. 1/6 General Purpose NPN Epitaxial Planar Transistor BTD1768A3 Description The BTD1768A3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features Low collector saturation voltage High breakdown voltage, V =80V (m
Otros transistores... BTD1616AM3 , BTD1664M3 , BTD1760J3 , BTD1766M3 , BTD1768A3 , BTD1768BA3 , BTD1768M3 , BTD1768N3 , TIP41 , BTD1782N3 , BTD1805AD3 , BTD1805BT3 , BTD1805F3 , BTD1805FP , BTD1805I3 , BTD1805J3 , BTD1816I3 .
History: 2SA2013 | 2SC15 | 2SA2126 | 2SC2613K
History: 2SA2013 | 2SC15 | 2SA2126 | 2SC2613K
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