BTD1782N3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Spec. No. : C304N3 Issued Date : 2006.06.12 CYStech Electronics Corp.Revised Date : 2007.12.11 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BTD1782N3Description The BTD1782N3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features Low V , V = 0.15V(typ) @I =500mA/I =50mA CE(SAT) CE(SAT) C B Hig

Spec. No. : C304A3-B Issued Date : 2006.08.21 CYStech Electronics Corp.Revised Date :2010.07.02 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BTD1768BA3Description The BTD1768BA3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features Low collector saturation voltage High breakdown voltage, V =80

Spec. No. : C304N3 Issued Date : 2005.01.10 CYStech Electronics Corp.Revised Date :2010.10.20 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BTD1768N3Description The BTD1768N3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features Low collector saturation voltage High breakdown voltage, V =80V (m

Spec. No. : C848J3 Issued Date : 2003.04.18 CYStech Electronics Corp.Revised Date : 2010.12.08 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 50V IC 3ABTD1760J3 RCESAT 125m typ.Features Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB1184J3 Pb-free package

Spec. No. : C304A3 Issued Date : 2003.07.28 CYStech Electronics Corp.Revised Date :2012.12.27 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BTD1768A3Description The BTD1768A3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features Low collector saturation voltage High breakdown voltage, V =80V (m

Spec. No. : C858M3 Issued Date : 2011.12.20 CYStech Electronics Corp.Revised Date : 2013.08.12 Page No. : 1/8 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 32VIC 2ABTD1766M3 RCESAT(typ) 150m Features Low VCE(sat), 0.3V typ. at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB1188M3 Pb-free lead plating and halogen-fr

Spec. No. : C310M3 Issued Date : 2007.01.10 CYStech Electronics Corp.Revised Date : 2013.08.07 Page No. : 1/6 NPN Epitaxial Planar Transistor BTD1768M3 Features High VCEO, VCEO=80V High IC, IC(DC)=1A Low VCE(sat) Good current gain linearity Complementary to BTB1198M3 Pb-free lead plating Symbol Outline BTD1768M3 SOT-89 BBase B C E

Spec. No. : C304S3 Issued Date : 2009.11.19 CYStech Electronics Corp.Revised Date : Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BVCEO 80VIC 1ABTD1768S3RCESAT(MAX) 0.5 Description The BTD1768S3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features Low collector saturation voltage High