Справочник транзисторов. BTD1782N3

 

Биполярный транзистор BTD1782N3 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: BTD1782N3
   Маркировка: AJ
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.2 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 180 MHz
   Ёмкость коллекторного перехода (Cc): 7.5 pf
   Статический коэффициент передачи тока (hfe): 120
   Корпус транзистора: SOT23

 Аналоги (замена) для BTD1782N3

 

 

BTD1782N3 Datasheet (PDF)

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btd1782n3.pdf

BTD1782N3
BTD1782N3

Spec. No. : C304N3 Issued Date : 2006.06.12 CYStech Electronics Corp.Revised Date : 2007.12.11 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BTD1782N3Description The BTD1782N3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features Low V , V = 0.15V(typ) @I =500mA/I =50mA CE(SAT) CE(SAT) C B Hig

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btd1768ba3.pdf

BTD1782N3
BTD1782N3

Spec. No. : C304A3-B Issued Date : 2006.08.21 CYStech Electronics Corp.Revised Date :2010.07.02 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BTD1768BA3Description The BTD1768BA3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features Low collector saturation voltage High breakdown voltage, V =80

 9.2. Size:255K  cystek
btd1768n3.pdf

BTD1782N3
BTD1782N3

Spec. No. : C304N3 Issued Date : 2005.01.10 CYStech Electronics Corp.Revised Date :2010.10.20 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BTD1768N3Description The BTD1768N3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features Low collector saturation voltage High breakdown voltage, V =80V (m

 9.3. Size:218K  cystek
btd1760j3.pdf

BTD1782N3
BTD1782N3

Spec. No. : C848J3 Issued Date : 2003.04.18 CYStech Electronics Corp.Revised Date : 2010.12.08 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 50V IC 3ABTD1760J3 RCESAT 125m typ.Features Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB1184J3 Pb-free package

 9.4. Size:248K  cystek
btd1768a3.pdf

BTD1782N3
BTD1782N3

Spec. No. : C304A3 Issued Date : 2003.07.28 CYStech Electronics Corp.Revised Date :2012.12.27 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BTD1768A3Description The BTD1768A3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features Low collector saturation voltage High breakdown voltage, V =80V (m

 9.5. Size:256K  cystek
btd1766m3.pdf

BTD1782N3
BTD1782N3

Spec. No. : C858M3 Issued Date : 2011.12.20 CYStech Electronics Corp.Revised Date : 2013.08.12 Page No. : 1/8 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 32VIC 2ABTD1766M3 RCESAT(typ) 150m Features Low VCE(sat), 0.3V typ. at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB1188M3 Pb-free lead plating and halogen-fr

 9.6. Size:232K  cystek
btd1768m3.pdf

BTD1782N3
BTD1782N3

Spec. No. : C310M3 Issued Date : 2007.01.10 CYStech Electronics Corp.Revised Date : 2013.08.07 Page No. : 1/6 NPN Epitaxial Planar Transistor BTD1768M3 Features High VCEO, VCEO=80V High IC, IC(DC)=1A Low VCE(sat) Good current gain linearity Complementary to BTB1198M3 Pb-free lead plating Symbol Outline BTD1768M3 SOT-89 BBase B C E

 9.7. Size:258K  cystek
btd1768s3.pdf

BTD1782N3
BTD1782N3

Spec. No. : C304S3 Issued Date : 2009.11.19 CYStech Electronics Corp.Revised Date : Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BVCEO 80VIC 1ABTD1768S3RCESAT(MAX) 0.5 Description The BTD1768S3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features Low collector saturation voltage High

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