BTD1805F3 Todos los transistores

 ..1. Size:256K  cystek
 btd1805f3.pdf

Spec. No. C820F3 Issued Date 2011.12.01 CYStech Electronics Corp. Revised Date 2011.12.16 Page No. 1/ 7 Low Vcesat NPN Epitaxial Planar Transistor BTD1805F3 Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Featu

 6.1. Size:277K  cystek
 btd1805fp.pdf

Spec. No. C820FP Issued Date 2005.03.29 CYStech Electronics Corp. Revised Date 2013.10.29 Page No. 1/ 7 Low Vcesat NPN Epitaxial Planar Transistor BTD1805FP Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Featur

 7.1. Size:276K  cystek
 btd1805i3.pdf

Spec. No. C820I3 Issued Date 2004.12.19 CYStech Electronics Corp. Revised Date 2012.09.19 Page No. 1/ 8 Low Vcesat NPN Epitaxial Planar Transistor BTD1805I3 Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Featur

 7.2. Size:297K  cystek
 btd1805j3.pdf

Spec. No. C820J3 Issued Date 2004.12.19 CYStech Electronics Corp. Revised Date 2010.12.08 Page No. 1/ 6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 60V IC 5A BTD1805J3 RCESAT 100m Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with ve

 7.3. Size:146K  cystek
 btd1805bt3.pdf

Spec. No. C820T3 Issued Date 2007.07.09 CYStech Electronics Corp. Revised Date Page No. 1/ 4 Low Vcesat NPN Epitaxial Planar Transistor BTD1805BT3 Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features

 7.4. Size:249K  cystek
 btd1805ad3.pdf

Spec. No. C821D3 Issued Date 2006.11.23 CYStech Electronics Corp. Revised Date 2012.07.13 Page No. 1/ 7 Low Vcesat NPN Epitaxial Planar Transistor BTD1805AD3 Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Featu

 7.5. Size:172K  cystek
 btd1805d3.pdf

Spec. No. C820D3 Issued Date 2005.03.29 CYStech Electronics Corp. Revised Date 2005.04.20 Page No. 1/ 4 Low Vcesat NPN Epitaxial Planar Transistor BTD1805D3 Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Featur