BTD1805F3 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

BTD1805F3 Specs and Replacement

Type Designator: BTD1805F3

SMD Transistor Code: D1805

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 150 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 7 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 50 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: TO263

BTD1805F3 Substitution

- BJT ⓘ Cross-Reference Search

BTD1805F3 datasheet

..1. Size:256K cystek

btd1805f3.pdf pdf_icon

Spec. No. C820F3 Issued Date 2011.12.01 CYStech Electronics Corp. Revised Date 2011.12.16 Page No. 1/ 7 Low Vcesat NPN Epitaxial Planar Transistor BTD1805F3 Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Featu... See More ⇒

6.1. Size:277K cystek

btd1805fp.pdf pdf_icon

Spec. No. C820FP Issued Date 2005.03.29 CYStech Electronics Corp. Revised Date 2013.10.29 Page No. 1/ 7 Low Vcesat NPN Epitaxial Planar Transistor BTD1805FP Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Featur... See More ⇒

7.1. Size:276K cystek

btd1805i3.pdf pdf_icon

Spec. No. C820I3 Issued Date 2004.12.19 CYStech Electronics Corp. Revised Date 2012.09.19 Page No. 1/ 8 Low Vcesat NPN Epitaxial Planar Transistor BTD1805I3 Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Featur... See More ⇒

7.2. Size:297K cystek

btd1805j3.pdf pdf_icon

Spec. No. C820J3 Issued Date 2004.12.19 CYStech Electronics Corp. Revised Date 2010.12.08 Page No. 1/ 6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 60V IC 5A BTD1805J3 RCESAT 100m Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with ve... See More ⇒