BTD1858A3 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BTD1858A3
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.75 W
Tensión colector-base (Vcb): 180 V
Tensión colector-emisor (Vce): 180 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 1.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 140 MHz
Capacitancia de salida (Cc): 27 pF
Ganancia de corriente contínua (hFE): 180
Encapsulados: TO-92
Búsqueda de reemplazo de BTD1858A3
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BTD1858A3 datasheet
..1. Size:202K cystek
btd1858a3.pdf 
Spec. No. C856A3 Issued Date 2006.06.05 CYStech Electronics Corp. Revised Date 2006.06.08 Page No. 1/9 Silicon NPN Epitaxial Planar Transistor BTD1858A3 Description High BV CEO High current capability Pb-free package Symbol Outline BTD1858A3 TO-92 B Base C Collector E Emitter E C B Absolute Maximum Ratings (Ta=25 C) Parameter Symbo
7.1. Size:173K cystek
btd1858t3.pdf
Spec. No. C856T3 Issued Date 2007.03.20 CYStech Electronics Corp. Revised Date Page No. 1/7 Silicon NPN Epitaxial Planar Transistor BTD1858T3 Description High BV CEO High current capability Pb-free package Symbol Outline BTD1858T3 TO-126 B Base C Collector E Emitter B C E Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Limits
7.2. Size:273K cystek
btd1858i3.pdf
Spec. No. C856I3 Issued Date 2006.06.21 CYStech Electronics Corp. Revised Date 2012.08.21 Page No. 1/7 Silicon NPN Epitaxial Planar Transistor BTD1858I3 Description High BV CEO High current capability Pb-free lead plating package Symbol Outline BTD1858I3 TO-251AB TO-251S B Base C Collector E Emitter B C E B C E Absolute Maximum Ratin
8.1. Size:246K cystek
btd1857am3.pdf
Spec. No. C855M3-R Issued Date 2004.08.06 CYStech Electronics Corp. Revised Date 2013.10.31 Page No. 1/6 Silicon NPN Epitaxial Planar Transistor BVCEO 160V IC 1.5A BTD1857AM3 RCESAT(MAX) 0.3 Description High BV CEO High current capability Complementary to BTB1236AM3 Pb-free lead plating and halogen-free package Symbol Outline BTD1857AM3
8.2. Size:159K cystek
btd1857at3.pdf
Spec. No. C855T3 Issued Date 2004.12.15 CYStech Electronics Corp. Revised Date 2006.06.12 Page No. 1/4 Silicon NPN Epitaxial Planar Transistor BTD1857AT3 Description High BV CEO High current capability Complementary to BTB1236AT3 Pb-free package Symbol Outline BTD1857AT3 TO-126 B Base C Collector E C B E Emitter Absolute Maximum
8.3. Size:182K cystek
btd1857ae3.pdf
Spec. No. C855E3 Issued Date 2004.08.06 CYStech Electronics Corp. Revised Date 2013.11.13 Page No. 1/5 Silicon NPN Epitaxial Planar Transistor BTD1857AE3 Description High BV CEO High current capability Complementary to BTB1236AE3 Pb-free lead plating package Symbol Outline BTD1857AE3 TO-220AB B Base C Collector E Emitter B C E
8.4. Size:178K cystek
btd1857ai3.pdf
Spec. No. C855I3 Issued Date 2004.09.16 CYStech Electronics Corp. Revised Date 2012.01.16 Page No. 1/5 Silicon NPN Epitaxial Planar Transistor BTD1857AI3 Description High BV CEO High current capability Complementary to BTB1236AI3 RoHS compliant package Symbol Outline BTD1857AI3 TO-251 B Base C Collector E Emitter B C E Absolute Ma
8.5. Size:165K cystek
btd1857ad3.pdf
Spec. No. C855D3 Issued Date 2004.09.21 CYStech Electronics Corp. Revised Date 2006.06.12 Page No. 1/4 Silicon NPN Epitaxial Planar Transistor BTD1857AD3 Description High BV CEO High current capability Complementary to BTB1236AD3 Pb-free package Symbol Outline BTD1857AD3 TO-126ML B Base C Collector E Emitter E C B Absolute Maxim
8.6. Size:202K cystek
btd1857aj3.pdf
Spec. No. C855J3 Issued Date 2004.10.04 CYStech Electronics Corp. Revised Date 2013.10.31 Page No. 1/6 Silicon NPN Epitaxial Planar Transistor BVCEO 160V IC 1.5A BTD1857AJ3 RCESAT 310m Description High BV CEO High current capability Complementary to BTB1236AJ3 Pb-free lead plating and halogen-free package Symbol Outline BTD1857AJ3 TO-252(DP
8.7. Size:228K cystek
btd1857aj3g.pdf
Spec. No. C855J3G Issued Date 2004.10.04 CYStech Electronics Corp. Revised Date 2010.12.08 Page No. 1/7 Silicon NPN Epitaxial Planar Transistor BVCEO 160V IC 1.5A BTD1857AJ3G RCESAT 310m Description High BV CEO High current capability Complementary to BTB1236AJ3G RoHS compliant and Halogen-free package Symbol Outline BTD1857AJ3G TO-252AB TO
8.8. Size:164K cystek
btd1857afp.pdf
Spec. No. C855FP Issued Date 2004.08.15 CYStech Electronics Corp. Revised Date 2006.06.12 Page No. 1/4 Silicon NPN Epitaxial Planar Transistor BTD1857AFP Description High BV CEO High current capability Complementary to BTB1236AFP Pb-free package Symbol Outline BTD1857AFP TO-220FP B Base C Collector E Emitter B C E Absolute Maxi
8.9. Size:148K cystek
btd1857a3.pdf
Spec. No. C855A3 Issued Date 2004.12.23 CYStech Electronics Corp. Revised Date 2012.05.08 Page No. 1/9 Silicon NPN Epitaxial Planar Transistor BTD1857A3 Description High BV CEO High current capability Complementary to BTB1236A3 Pb-free package Symbol Outline BTD1857A3 TO-92 B Base C Collector E Emitter E C B Absolute Maximum Rat
8.10. Size:205K cystek
btd1857al3.pdf
Spec. No. C855L3 Issued Date 2005.06.17 CYStech Electronics Corp. Revised Date 2010.12.31 Page No. 1/7 Silicon NPN Epitaxial Planar Transistor BTD1857AL3 Description High BV CEO High current capability Complementary to BTB1236AL3 Pb-free lead plating package Symbol Outline BTD1857AL3 SOT-223 C E C B Base B C Collector E
Otros transistores... BTD1857AE3
, BTD1857AFP
, BTD1857AI3
, BTD1857AJ3
, BTD1857AJ3G
, BTD1857AL3
, BTD1857AM3
, BTD1857AT3
, 2SD1047
, BTD1858I3
, BTD1858T3
, BTD1864I3
, BTD1980J3
, BTD2040N3S
, BTD2057A3
, BTD2061FP
, BTD2098AM3
.
