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BTD1858I3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BTD1858I3
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 15 W
   Tensión colector-base (Vcb): 180 V
   Tensión colector-emisor (Vce): 160 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 140 MHz
   Capacitancia de salida (Cc): 27 pF
   Ganancia de corriente contínua (hfe): 180
   Paquete / Cubierta: TO-251AB TO-251S
     - Selección de transistores por parámetros

 

BTD1858I3 Datasheet (PDF)

 ..1. Size:273K  cystek
btd1858i3.pdf pdf_icon

BTD1858I3

Spec. No. : C856I3 Issued Date : 2006.06.21 CYStech Electronics Corp.Revised Date : 2012.08.21 Page No. : 1/7 Silicon NPN Epitaxial Planar Transistor BTD1858I3Description High BV CEO High current capability Pb-free lead plating package Symbol Outline BTD1858I3 TO-251AB TO-251S BBase CCollector EEmitter B C E B C E Absolute Maximum Ratin

 7.1. Size:173K  cystek
btd1858t3.pdf pdf_icon

BTD1858I3

Spec. No. : C856T3 Issued Date : 2007.03.20 CYStech Electronics Corp.Revised Date : Page No. : 1/7 Silicon NPN Epitaxial Planar Transistor BTD1858T3Description High BV CEO High current capability Pb-free package Symbol Outline BTD1858T3 TO-126 BBase CCollector EEmitter B C E Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limits

 7.2. Size:202K  cystek
btd1858a3.pdf pdf_icon

BTD1858I3

Spec. No. : C856A3 Issued Date : 2006.06.05 CYStech Electronics Corp.Revised Date : 2006.06.08 Page No. : 1/9 Silicon NPN Epitaxial Planar Transistor BTD1858A3Description High BV CEO High current capability Pb-free package Symbol Outline BTD1858A3 TO-92 BBase CCollector EEmitter E C BAbsolute Maximum Ratings (Ta=25C) Parameter Symbo

 8.1. Size:246K  cystek
btd1857am3.pdf pdf_icon

BTD1858I3

Spec. No. : C855M3-R Issued Date : 2004.08.06 CYStech Electronics Corp.Revised Date : 2013.10.31 Page No. : 1/6 Silicon NPN Epitaxial Planar Transistor BVCEO 160VIC 1.5ABTD1857AM3RCESAT(MAX) 0.3 Description High BV CEO High current capability Complementary to BTB1236AM3 Pb-free lead plating and halogen-free package Symbol Outline BTD1857AM3

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BDX83C | BSS56 | 2SB1204

 

 
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