Биполярный транзистор BTD1858I3 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BTD1858I3
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 180 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 160 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1.5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 140 MHz
Ёмкость коллекторного перехода (Cc): 27 pf
Статический коэффициент передачи тока (hfe): 180
Корпус транзистора: TO-251AB TO-251S
Аналоги (замена) для BTD1858I3
BTD1858I3 Datasheet (PDF)
btd1858i3.pdf
Spec. No. : C856I3 Issued Date : 2006.06.21 CYStech Electronics Corp.Revised Date : 2012.08.21 Page No. : 1/7 Silicon NPN Epitaxial Planar Transistor BTD1858I3Description High BV CEO High current capability Pb-free lead plating package Symbol Outline BTD1858I3 TO-251AB TO-251S BBase CCollector EEmitter B C E B C E Absolute Maximum Ratin
btd1858t3.pdf
Spec. No. : C856T3 Issued Date : 2007.03.20 CYStech Electronics Corp.Revised Date : Page No. : 1/7 Silicon NPN Epitaxial Planar Transistor BTD1858T3Description High BV CEO High current capability Pb-free package Symbol Outline BTD1858T3 TO-126 BBase CCollector EEmitter B C E Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limits
btd1858a3.pdf
Spec. No. : C856A3 Issued Date : 2006.06.05 CYStech Electronics Corp.Revised Date : 2006.06.08 Page No. : 1/9 Silicon NPN Epitaxial Planar Transistor BTD1858A3Description High BV CEO High current capability Pb-free package Symbol Outline BTD1858A3 TO-92 BBase CCollector EEmitter E C BAbsolute Maximum Ratings (Ta=25C) Parameter Symbo
btd1857am3.pdf
Spec. No. : C855M3-R Issued Date : 2004.08.06 CYStech Electronics Corp.Revised Date : 2013.10.31 Page No. : 1/6 Silicon NPN Epitaxial Planar Transistor BVCEO 160VIC 1.5ABTD1857AM3RCESAT(MAX) 0.3 Description High BV CEO High current capability Complementary to BTB1236AM3 Pb-free lead plating and halogen-free package Symbol Outline BTD1857AM3
btd1857at3.pdf
Spec. No. : C855T3 Issued Date : 2004.12.15 CYStech Electronics Corp.Revised Date :2006.06.12 Page No. : 1/4 Silicon NPN Epitaxial Planar Transistor BTD1857AT3Description High BV CEO High current capability Complementary to BTB1236AT3 Pb-free package Symbol Outline BTD1857AT3 TO-126 BBase CCollector E C B EEmitter Absolute Maximum
btd1857ae3.pdf
Spec. No. : C855E3 Issued Date : 2004.08.06 CYStech Electronics Corp.Revised Date :2013.11.13 Page No. : 1/5 Silicon NPN Epitaxial Planar Transistor BTD1857AE3Description High BV CEO High current capability Complementary to BTB1236AE3 Pb-free lead plating package Symbol Outline BTD1857AE3 TO-220AB BBase CCollector EEmitter B C E
btd1857ai3.pdf
Spec. No. : C855I3 Issued Date : 2004.09.16 CYStech Electronics Corp.Revised Date :2012.01.16 Page No. : 1/5 Silicon NPN Epitaxial Planar Transistor BTD1857AI3Description High BV CEO High current capability Complementary to BTB1236AI3 RoHS compliant package Symbol Outline BTD1857AI3 TO-251 BBase CCollector EEmitter B C E Absolute Ma
btd1857ad3.pdf
Spec. No. : C855D3 Issued Date : 2004.09.21 CYStech Electronics Corp.Revised Date :2006.06.12 Page No. : 1/4 Silicon NPN Epitaxial Planar Transistor BTD1857AD3Description High BV CEO High current capability Complementary to BTB1236AD3 Pb-free package Symbol Outline BTD1857AD3 TO-126ML BBase CCollector EEmitter E C B Absolute Maxim
btd1857aj3.pdf
Spec. No. : C855J3 Issued Date : 2004.10.04 CYStech Electronics Corp.Revised Date :2013.10.31 Page No. : 1/6 Silicon NPN Epitaxial Planar Transistor BVCEO 160VIC 1.5ABTD1857AJ3RCESAT 310m Description High BV CEO High current capability Complementary to BTB1236AJ3 Pb-free lead plating and halogen-free package Symbol Outline BTD1857AJ3 TO-252(DP
btd1857aj3g.pdf
Spec. No. : C855J3G Issued Date : 2004.10.04 CYStech Electronics Corp.Revised Date :2010.12.08 Page No. : 1/7 Silicon NPN Epitaxial Planar Transistor BVCEO 160VIC 1.5ABTD1857AJ3GRCESAT 310m Description High BV CEO High current capability Complementary to BTB1236AJ3G RoHS compliant and Halogen-free package Symbol Outline BTD1857AJ3G TO-252AB TO
btd1857afp.pdf
Spec. No. : C855FP Issued Date : 2004.08.15 CYStech Electronics Corp.Revised Date :2006.06.12 Page No. : 1/4 Silicon NPN Epitaxial Planar Transistor BTD1857AFPDescription High BV CEO High current capability Complementary to BTB1236AFP Pb-free package Symbol Outline BTD1857AFP TO-220FP BBase CCollector EEmitter B C E Absolute Maxi
btd1857a3.pdf
Spec. No. : C855A3 Issued Date : 2004.12.23 CYStech Electronics Corp.Revised Date : 2012.05.08 Page No. : 1/9 Silicon NPN Epitaxial Planar Transistor BTD1857A3Description High BV CEO High current capability Complementary to BTB1236A3 Pb-free package Symbol Outline BTD1857A3 TO-92 BBase CCollector EEmitter E C BAbsolute Maximum Rat
btd1857al3.pdf
Spec. No. : C855L3 Issued Date : 2005.06.17 CYStech Electronics Corp.Revised Date : 2010.12.31 Page No. : 1/7 Silicon NPN Epitaxial Planar Transistor BTD1857AL3Description High BV CEO High current capability Complementary to BTB1236AL3 Pb-free lead plating package Symbol Outline BTD1857AL3 SOT-223 C E C BBase B CCollector E
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
