BTD1864I3 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BTD1864I3 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 15 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 400 MHz
Capacitancia de salida (Cc): 15 pF
Ganancia de corriente contínua (hFE): 180
Encapsulados: TO-251
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BTD1864I3 datasheet
..1. Size:157K cystek
btd1864i3.pdf 
Spec. No. C848I3 Issued Date 2003.04.18 CYStech Electronics Corp. Revised Date 2004.06.30 Page No. 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD1864I3 Features Low VCE(sat) Excellent current gain characteristics Complementary to BTB1243I3 Symbol Outline BTD1864I3 TO-251 B Base C Collector B C E Emitter B C E Absolute Maximum
9.1. Size:173K cystek
btd1858t3.pdf
Spec. No. C856T3 Issued Date 2007.03.20 CYStech Electronics Corp. Revised Date Page No. 1/7 Silicon NPN Epitaxial Planar Transistor BTD1858T3 Description High BV CEO High current capability Pb-free package Symbol Outline BTD1858T3 TO-126 B Base C Collector E Emitter B C E Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Limits
9.2. Size:276K cystek
btd1805i3.pdf
Spec. No. C820I3 Issued Date 2004.12.19 CYStech Electronics Corp. Revised Date 2012.09.19 Page No. 1/ 8 Low Vcesat NPN Epitaxial Planar Transistor BTD1805I3 Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Featur
9.3. Size:246K cystek
btd1857am3.pdf
Spec. No. C855M3-R Issued Date 2004.08.06 CYStech Electronics Corp. Revised Date 2013.10.31 Page No. 1/6 Silicon NPN Epitaxial Planar Transistor BVCEO 160V IC 1.5A BTD1857AM3 RCESAT(MAX) 0.3 Description High BV CEO High current capability Complementary to BTB1236AM3 Pb-free lead plating and halogen-free package Symbol Outline BTD1857AM3
9.4. Size:159K cystek
btd1857at3.pdf
Spec. No. C855T3 Issued Date 2004.12.15 CYStech Electronics Corp. Revised Date 2006.06.12 Page No. 1/4 Silicon NPN Epitaxial Planar Transistor BTD1857AT3 Description High BV CEO High current capability Complementary to BTB1236AT3 Pb-free package Symbol Outline BTD1857AT3 TO-126 B Base C Collector E C B E Emitter Absolute Maximum
9.5. Size:182K cystek
btd1857ae3.pdf
Spec. No. C855E3 Issued Date 2004.08.06 CYStech Electronics Corp. Revised Date 2013.11.13 Page No. 1/5 Silicon NPN Epitaxial Planar Transistor BTD1857AE3 Description High BV CEO High current capability Complementary to BTB1236AE3 Pb-free lead plating package Symbol Outline BTD1857AE3 TO-220AB B Base C Collector E Emitter B C E
9.6. Size:178K cystek
btd1857ai3.pdf
Spec. No. C855I3 Issued Date 2004.09.16 CYStech Electronics Corp. Revised Date 2012.01.16 Page No. 1/5 Silicon NPN Epitaxial Planar Transistor BTD1857AI3 Description High BV CEO High current capability Complementary to BTB1236AI3 RoHS compliant package Symbol Outline BTD1857AI3 TO-251 B Base C Collector E Emitter B C E Absolute Ma
9.7. Size:297K cystek
btd1805j3.pdf
Spec. No. C820J3 Issued Date 2004.12.19 CYStech Electronics Corp. Revised Date 2010.12.08 Page No. 1/ 6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 60V IC 5A BTD1805J3 RCESAT 100m Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with ve
9.8. Size:165K cystek
btd1857ad3.pdf
Spec. No. C855D3 Issued Date 2004.09.21 CYStech Electronics Corp. Revised Date 2006.06.12 Page No. 1/4 Silicon NPN Epitaxial Planar Transistor BTD1857AD3 Description High BV CEO High current capability Complementary to BTB1236AD3 Pb-free package Symbol Outline BTD1857AD3 TO-126ML B Base C Collector E Emitter E C B Absolute Maxim
9.9. Size:146K cystek
btd1805bt3.pdf
Spec. No. C820T3 Issued Date 2007.07.09 CYStech Electronics Corp. Revised Date Page No. 1/ 4 Low Vcesat NPN Epitaxial Planar Transistor BTD1805BT3 Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features
9.10. Size:249K cystek
btd1805ad3.pdf
Spec. No. C821D3 Issued Date 2006.11.23 CYStech Electronics Corp. Revised Date 2012.07.13 Page No. 1/ 7 Low Vcesat NPN Epitaxial Planar Transistor BTD1805AD3 Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Featu
9.11. Size:228K cystek
btd1816i3.pdf
Spec. No. C821I3 Issued Date 2005.10.05 CYStech Electronics Corp. Revised Date 2009.02.04 Page No. 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 100V IC 4A BTD1816I3 RCESAT 50m Features Low collector-to-emitter saturation voltage High-speed switching Large current capability Good linearity of hFE High fT RoHS compliant package
9.12. Size:202K cystek
btd1857aj3.pdf
Spec. No. C855J3 Issued Date 2004.10.04 CYStech Electronics Corp. Revised Date 2013.10.31 Page No. 1/6 Silicon NPN Epitaxial Planar Transistor BVCEO 160V IC 1.5A BTD1857AJ3 RCESAT 310m Description High BV CEO High current capability Complementary to BTB1236AJ3 Pb-free lead plating and halogen-free package Symbol Outline BTD1857AJ3 TO-252(DP
9.13. Size:202K cystek
btd1858a3.pdf
Spec. No. C856A3 Issued Date 2006.06.05 CYStech Electronics Corp. Revised Date 2006.06.08 Page No. 1/9 Silicon NPN Epitaxial Planar Transistor BTD1858A3 Description High BV CEO High current capability Pb-free package Symbol Outline BTD1858A3 TO-92 B Base C Collector E Emitter E C B Absolute Maximum Ratings (Ta=25 C) Parameter Symbo
9.14. Size:228K cystek
btd1857aj3g.pdf
Spec. No. C855J3G Issued Date 2004.10.04 CYStech Electronics Corp. Revised Date 2010.12.08 Page No. 1/7 Silicon NPN Epitaxial Planar Transistor BVCEO 160V IC 1.5A BTD1857AJ3G RCESAT 310m Description High BV CEO High current capability Complementary to BTB1236AJ3G RoHS compliant and Halogen-free package Symbol Outline BTD1857AJ3G TO-252AB TO
9.15. Size:256K cystek
btd1805f3.pdf
Spec. No. C820F3 Issued Date 2011.12.01 CYStech Electronics Corp. Revised Date 2011.12.16 Page No. 1/ 7 Low Vcesat NPN Epitaxial Planar Transistor BTD1805F3 Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Featu
9.16. Size:318K cystek
btd1816j3.pdf
Spec. No. C821J3 Issued Date 2005.03.29 CYStech Electronics Corp. Revised Date 2011.01.19 Page No. 1/8 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 100V IC 4A BTD1816J3 RCESAT 57m (typ) Features Low collector-to-emitter saturation voltage High-speed switching Large current capability Good linearity of hFE High fT RoHS compliant
9.17. Size:164K cystek
btd1857afp.pdf
Spec. No. C855FP Issued Date 2004.08.15 CYStech Electronics Corp. Revised Date 2006.06.12 Page No. 1/4 Silicon NPN Epitaxial Planar Transistor BTD1857AFP Description High BV CEO High current capability Complementary to BTB1236AFP Pb-free package Symbol Outline BTD1857AFP TO-220FP B Base C Collector E Emitter B C E Absolute Maxi
9.18. Size:277K cystek
btd1805fp.pdf
Spec. No. C820FP Issued Date 2005.03.29 CYStech Electronics Corp. Revised Date 2013.10.29 Page No. 1/ 7 Low Vcesat NPN Epitaxial Planar Transistor BTD1805FP Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Featur
9.19. Size:148K cystek
btd1857a3.pdf
Spec. No. C855A3 Issued Date 2004.12.23 CYStech Electronics Corp. Revised Date 2012.05.08 Page No. 1/9 Silicon NPN Epitaxial Planar Transistor BTD1857A3 Description High BV CEO High current capability Complementary to BTB1236A3 Pb-free package Symbol Outline BTD1857A3 TO-92 B Base C Collector E Emitter E C B Absolute Maximum Rat
9.20. Size:172K cystek
btd1805d3.pdf
Spec. No. C820D3 Issued Date 2005.03.29 CYStech Electronics Corp. Revised Date 2005.04.20 Page No. 1/ 4 Low Vcesat NPN Epitaxial Planar Transistor BTD1805D3 Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Featur
9.21. Size:205K cystek
btd1857al3.pdf
Spec. No. C855L3 Issued Date 2005.06.17 CYStech Electronics Corp. Revised Date 2010.12.31 Page No. 1/7 Silicon NPN Epitaxial Planar Transistor BTD1857AL3 Description High BV CEO High current capability Complementary to BTB1236AL3 Pb-free lead plating package Symbol Outline BTD1857AL3 SOT-223 C E C B Base B C Collector E
9.22. Size:273K cystek
btd1858i3.pdf
Spec. No. C856I3 Issued Date 2006.06.21 CYStech Electronics Corp. Revised Date 2012.08.21 Page No. 1/7 Silicon NPN Epitaxial Planar Transistor BTD1858I3 Description High BV CEO High current capability Pb-free lead plating package Symbol Outline BTD1858I3 TO-251AB TO-251S B Base C Collector E Emitter B C E B C E Absolute Maximum Ratin
Otros transistores... BTD1857AJ3, BTD1857AJ3G, BTD1857AL3, BTD1857AM3, BTD1857AT3, BTD1858A3, BTD1858I3, BTD1858T3, BC327, BTD1980J3, BTD2040N3S, BTD2057A3, BTD2061FP, BTD2098AM3, BTD2098LN3, BTD2098M3, BTD2114N3
