Биполярный транзистор BTD1864I3 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BTD1864I3
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 400 MHz
Ёмкость коллекторного перехода (Cc): 15 pf
Статический коэффициент передачи тока (hfe): 180
Корпус транзистора: TO-251
Аналоги (замена) для BTD1864I3
BTD1864I3 Datasheet (PDF)
btd1864i3.pdf
Spec. No. : C848I3 Issued Date : 2003.04.18 CYStech Electronics Corp. Revised Date : 2004.06.30 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD1864I3 Features Low VCE(sat) Excellent current gain characteristics Complementary to BTB1243I3 Symbol Outline BTD1864I3TO-251 BBase CCollector B C EEmitter B C E Absolute Maximum
btd1858t3.pdf
Spec. No. : C856T3 Issued Date : 2007.03.20 CYStech Electronics Corp.Revised Date : Page No. : 1/7 Silicon NPN Epitaxial Planar Transistor BTD1858T3Description High BV CEO High current capability Pb-free package Symbol Outline BTD1858T3 TO-126 BBase CCollector EEmitter B C E Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limits
btd1805i3.pdf
Spec. No. : C820I3 Issued Date : 2004.12.19 CYStech Electronics Corp.Revised Date :2012.09.19 Page No. : 1/ 8 Low Vcesat NPN Epitaxial Planar Transistor BTD1805I3 Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Featur
btd1857am3.pdf
Spec. No. : C855M3-R Issued Date : 2004.08.06 CYStech Electronics Corp.Revised Date : 2013.10.31 Page No. : 1/6 Silicon NPN Epitaxial Planar Transistor BVCEO 160VIC 1.5ABTD1857AM3RCESAT(MAX) 0.3 Description High BV CEO High current capability Complementary to BTB1236AM3 Pb-free lead plating and halogen-free package Symbol Outline BTD1857AM3
btd1857at3.pdf
Spec. No. : C855T3 Issued Date : 2004.12.15 CYStech Electronics Corp.Revised Date :2006.06.12 Page No. : 1/4 Silicon NPN Epitaxial Planar Transistor BTD1857AT3Description High BV CEO High current capability Complementary to BTB1236AT3 Pb-free package Symbol Outline BTD1857AT3 TO-126 BBase CCollector E C B EEmitter Absolute Maximum
btd1857ae3.pdf
Spec. No. : C855E3 Issued Date : 2004.08.06 CYStech Electronics Corp.Revised Date :2013.11.13 Page No. : 1/5 Silicon NPN Epitaxial Planar Transistor BTD1857AE3Description High BV CEO High current capability Complementary to BTB1236AE3 Pb-free lead plating package Symbol Outline BTD1857AE3 TO-220AB BBase CCollector EEmitter B C E
btd1857ai3.pdf
Spec. No. : C855I3 Issued Date : 2004.09.16 CYStech Electronics Corp.Revised Date :2012.01.16 Page No. : 1/5 Silicon NPN Epitaxial Planar Transistor BTD1857AI3Description High BV CEO High current capability Complementary to BTB1236AI3 RoHS compliant package Symbol Outline BTD1857AI3 TO-251 BBase CCollector EEmitter B C E Absolute Ma
btd1805j3.pdf
Spec. No. : C820J3 Issued Date : 2004.12.19 CYStech Electronics Corp.Revised Date :2010.12.08 Page No. : 1/ 6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 60VIC 5ABTD1805J3 RCESAT 100m Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with ve
btd1857ad3.pdf
Spec. No. : C855D3 Issued Date : 2004.09.21 CYStech Electronics Corp.Revised Date :2006.06.12 Page No. : 1/4 Silicon NPN Epitaxial Planar Transistor BTD1857AD3Description High BV CEO High current capability Complementary to BTB1236AD3 Pb-free package Symbol Outline BTD1857AD3 TO-126ML BBase CCollector EEmitter E C B Absolute Maxim
btd1805bt3.pdf
Spec. No. : C820T3 Issued Date : 2007.07.09 CYStech Electronics Corp.Revised Date : Page No. : 1/ 4 Low Vcesat NPN Epitaxial Planar Transistor BTD1805BT3 Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features
btd1805ad3.pdf
Spec. No. : C821D3 Issued Date : 2006.11.23 CYStech Electronics Corp.Revised Date :2012.07.13 Page No. : 1/ 7 Low Vcesat NPN Epitaxial Planar Transistor BTD1805AD3 Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Featu
btd1816i3.pdf
Spec. No. : C821I3 Issued Date : 2005.10.05 CYStech Electronics Corp.Revised Date :2009.02.04 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 100VIC 4ABTD1816I3 RCESAT 50m Features Low collector-to-emitter saturation voltage High-speed switching Large current capability Good linearity of hFE High fT RoHS compliant package
btd1857aj3.pdf
Spec. No. : C855J3 Issued Date : 2004.10.04 CYStech Electronics Corp.Revised Date :2013.10.31 Page No. : 1/6 Silicon NPN Epitaxial Planar Transistor BVCEO 160VIC 1.5ABTD1857AJ3RCESAT 310m Description High BV CEO High current capability Complementary to BTB1236AJ3 Pb-free lead plating and halogen-free package Symbol Outline BTD1857AJ3 TO-252(DP
btd1858a3.pdf
Spec. No. : C856A3 Issued Date : 2006.06.05 CYStech Electronics Corp.Revised Date : 2006.06.08 Page No. : 1/9 Silicon NPN Epitaxial Planar Transistor BTD1858A3Description High BV CEO High current capability Pb-free package Symbol Outline BTD1858A3 TO-92 BBase CCollector EEmitter E C BAbsolute Maximum Ratings (Ta=25C) Parameter Symbo
btd1857aj3g.pdf
Spec. No. : C855J3G Issued Date : 2004.10.04 CYStech Electronics Corp.Revised Date :2010.12.08 Page No. : 1/7 Silicon NPN Epitaxial Planar Transistor BVCEO 160VIC 1.5ABTD1857AJ3GRCESAT 310m Description High BV CEO High current capability Complementary to BTB1236AJ3G RoHS compliant and Halogen-free package Symbol Outline BTD1857AJ3G TO-252AB TO
btd1805f3.pdf
Spec. No. : C820F3 Issued Date : 2011.12.01 CYStech Electronics Corp.Revised Date : 2011.12.16 Page No. : 1/ 7 Low Vcesat NPN Epitaxial Planar Transistor BTD1805F3 Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Featu
btd1816j3.pdf
Spec. No. : C821J3 Issued Date : 2005.03.29 CYStech Electronics Corp.Revised Date :2011.01.19 Page No. : 1/8 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 100V IC 4ABTD1816J3 RCESAT 57m(typ) Features Low collector-to-emitter saturation voltage High-speed switching Large current capability Good linearity of hFE High fT RoHS compliant
btd1857afp.pdf
Spec. No. : C855FP Issued Date : 2004.08.15 CYStech Electronics Corp.Revised Date :2006.06.12 Page No. : 1/4 Silicon NPN Epitaxial Planar Transistor BTD1857AFPDescription High BV CEO High current capability Complementary to BTB1236AFP Pb-free package Symbol Outline BTD1857AFP TO-220FP BBase CCollector EEmitter B C E Absolute Maxi
btd1805fp.pdf
Spec. No. : C820FP Issued Date : 2005.03.29 CYStech Electronics Corp.Revised Date :2013.10.29 Page No. : 1/ 7 Low Vcesat NPN Epitaxial Planar Transistor BTD1805FP Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Featur
btd1857a3.pdf
Spec. No. : C855A3 Issued Date : 2004.12.23 CYStech Electronics Corp.Revised Date : 2012.05.08 Page No. : 1/9 Silicon NPN Epitaxial Planar Transistor BTD1857A3Description High BV CEO High current capability Complementary to BTB1236A3 Pb-free package Symbol Outline BTD1857A3 TO-92 BBase CCollector EEmitter E C BAbsolute Maximum Rat
btd1805d3.pdf
Spec. No. : C820D3 Issued Date : 2005.03.29 CYStech Electronics Corp.Revised Date :2005.04.20 Page No. : 1/ 4 Low Vcesat NPN Epitaxial Planar Transistor BTD1805D3 Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Featur
btd1857al3.pdf
Spec. No. : C855L3 Issued Date : 2005.06.17 CYStech Electronics Corp.Revised Date : 2010.12.31 Page No. : 1/7 Silicon NPN Epitaxial Planar Transistor BTD1857AL3Description High BV CEO High current capability Complementary to BTB1236AL3 Pb-free lead plating package Symbol Outline BTD1857AL3 SOT-223 C E C BBase B CCollector E
btd1858i3.pdf
Spec. No. : C856I3 Issued Date : 2006.06.21 CYStech Electronics Corp.Revised Date : 2012.08.21 Page No. : 1/7 Silicon NPN Epitaxial Planar Transistor BTD1858I3Description High BV CEO High current capability Pb-free lead plating package Symbol Outline BTD1858I3 TO-251AB TO-251S BBase CCollector EEmitter B C E B C E Absolute Maximum Ratin
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Список транзисторов
Обновления
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