Spec. No. : C848I3 Issued Date : 2003.04.18 CYStech Electronics Corp. Revised Date : 2004.06.30 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD1864I3 Features Low VCE(sat) Excellent current gain characteristics Complementary to BTB1243I3 Symbol Outline BTD1864I3TO-251 BBase CCollector B C EEmitter B C E Absolute Maximum

Spec. No. : C856T3 Issued Date : 2007.03.20 CYStech Electronics Corp.Revised Date : Page No. : 1/7 Silicon NPN Epitaxial Planar Transistor BTD1858T3Description High BV CEO High current capability Pb-free package Symbol Outline BTD1858T3 TO-126 BBase CCollector EEmitter B C E Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limits

Spec. No. : C820I3 Issued Date : 2004.12.19 CYStech Electronics Corp.Revised Date :2012.09.19 Page No. : 1/ 8 Low Vcesat NPN Epitaxial Planar Transistor BTD1805I3 Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Featur

Spec. No. : C855M3-R Issued Date : 2004.08.06 CYStech Electronics Corp.Revised Date : 2013.10.31 Page No. : 1/6 Silicon NPN Epitaxial Planar Transistor BVCEO 160VIC 1.5ABTD1857AM3RCESAT(MAX) 0.3 Description High BV CEO High current capability Complementary to BTB1236AM3 Pb-free lead plating and halogen-free package Symbol Outline BTD1857AM3

Spec. No. : C855T3 Issued Date : 2004.12.15 CYStech Electronics Corp.Revised Date :2006.06.12 Page No. : 1/4 Silicon NPN Epitaxial Planar Transistor BTD1857AT3Description High BV CEO High current capability Complementary to BTB1236AT3 Pb-free package Symbol Outline BTD1857AT3 TO-126 BBase CCollector E C B EEmitter Absolute Maximum

Spec. No. : C855E3 Issued Date : 2004.08.06 CYStech Electronics Corp.Revised Date :2013.11.13 Page No. : 1/5 Silicon NPN Epitaxial Planar Transistor BTD1857AE3Description High BV CEO High current capability Complementary to BTB1236AE3 Pb-free lead plating package Symbol Outline BTD1857AE3 TO-220AB BBase CCollector EEmitter B C E

Spec. No. : C855I3 Issued Date : 2004.09.16 CYStech Electronics Corp.Revised Date :2012.01.16 Page No. : 1/5 Silicon NPN Epitaxial Planar Transistor BTD1857AI3Description High BV CEO High current capability Complementary to BTB1236AI3 RoHS compliant package Symbol Outline BTD1857AI3 TO-251 BBase CCollector EEmitter B C E Absolute Ma

Spec. No. : C820J3 Issued Date : 2004.12.19 CYStech Electronics Corp.Revised Date :2010.12.08 Page No. : 1/ 6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 60VIC 5ABTD1805J3 RCESAT 100m Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with ve

Spec. No. : C855D3 Issued Date : 2004.09.21 CYStech Electronics Corp.Revised Date :2006.06.12 Page No. : 1/4 Silicon NPN Epitaxial Planar Transistor BTD1857AD3Description High BV CEO High current capability Complementary to BTB1236AD3 Pb-free package Symbol Outline BTD1857AD3 TO-126ML BBase CCollector EEmitter E C B Absolute Maxim

Spec. No. : C820T3 Issued Date : 2007.07.09 CYStech Electronics Corp.Revised Date : Page No. : 1/ 4 Low Vcesat NPN Epitaxial Planar Transistor BTD1805BT3 Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features

Spec. No. : C821D3 Issued Date : 2006.11.23 CYStech Electronics Corp.Revised Date :2012.07.13 Page No. : 1/ 7 Low Vcesat NPN Epitaxial Planar Transistor BTD1805AD3 Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Featu

Spec. No. : C821I3 Issued Date : 2005.10.05 CYStech Electronics Corp.Revised Date :2009.02.04 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 100VIC 4ABTD1816I3 RCESAT 50m Features Low collector-to-emitter saturation voltage High-speed switching Large current capability Good linearity of hFE High fT RoHS compliant package

Spec. No. : C855J3 Issued Date : 2004.10.04 CYStech Electronics Corp.Revised Date :2013.10.31 Page No. : 1/6 Silicon NPN Epitaxial Planar Transistor BVCEO 160VIC 1.5ABTD1857AJ3RCESAT 310m Description High BV CEO High current capability Complementary to BTB1236AJ3 Pb-free lead plating and halogen-free package Symbol Outline BTD1857AJ3 TO-252(DP

Spec. No. : C856A3 Issued Date : 2006.06.05 CYStech Electronics Corp.Revised Date : 2006.06.08 Page No. : 1/9 Silicon NPN Epitaxial Planar Transistor BTD1858A3Description High BV CEO High current capability Pb-free package Symbol Outline BTD1858A3 TO-92 BBase CCollector EEmitter E C BAbsolute Maximum Ratings (Ta=25C) Parameter Symbo

Spec. No. : C855J3G Issued Date : 2004.10.04 CYStech Electronics Corp.Revised Date :2010.12.08 Page No. : 1/7 Silicon NPN Epitaxial Planar Transistor BVCEO 160VIC 1.5ABTD1857AJ3GRCESAT 310m Description High BV CEO High current capability Complementary to BTB1236AJ3G RoHS compliant and Halogen-free package Symbol Outline BTD1857AJ3G TO-252AB TO

Spec. No. : C820F3 Issued Date : 2011.12.01 CYStech Electronics Corp.Revised Date : 2011.12.16 Page No. : 1/ 7 Low Vcesat NPN Epitaxial Planar Transistor BTD1805F3 Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Featu

Spec. No. : C821J3 Issued Date : 2005.03.29 CYStech Electronics Corp.Revised Date :2011.01.19 Page No. : 1/8 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 100V IC 4ABTD1816J3 RCESAT 57m(typ) Features Low collector-to-emitter saturation voltage High-speed switching Large current capability Good linearity of hFE High fT RoHS compliant

Spec. No. : C855FP Issued Date : 2004.08.15 CYStech Electronics Corp.Revised Date :2006.06.12 Page No. : 1/4 Silicon NPN Epitaxial Planar Transistor BTD1857AFPDescription High BV CEO High current capability Complementary to BTB1236AFP Pb-free package Symbol Outline BTD1857AFP TO-220FP BBase CCollector EEmitter B C E Absolute Maxi

Spec. No. : C820FP Issued Date : 2005.03.29 CYStech Electronics Corp.Revised Date :2013.10.29 Page No. : 1/ 7 Low Vcesat NPN Epitaxial Planar Transistor BTD1805FP Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Featur

Spec. No. : C855A3 Issued Date : 2004.12.23 CYStech Electronics Corp.Revised Date : 2012.05.08 Page No. : 1/9 Silicon NPN Epitaxial Planar Transistor BTD1857A3Description High BV CEO High current capability Complementary to BTB1236A3 Pb-free package Symbol Outline BTD1857A3 TO-92 BBase CCollector EEmitter E C BAbsolute Maximum Rat

Spec. No. : C820D3 Issued Date : 2005.03.29 CYStech Electronics Corp.Revised Date :2005.04.20 Page No. : 1/ 4 Low Vcesat NPN Epitaxial Planar Transistor BTD1805D3 Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Featur

Spec. No. : C855L3 Issued Date : 2005.06.17 CYStech Electronics Corp.Revised Date : 2010.12.31 Page No. : 1/7 Silicon NPN Epitaxial Planar Transistor BTD1857AL3Description High BV CEO High current capability Complementary to BTB1236AL3 Pb-free lead plating package Symbol Outline BTD1857AL3 SOT-223 C E C BBase B CCollector E

Spec. No. : C856I3 Issued Date : 2006.06.21 CYStech Electronics Corp.Revised Date : 2012.08.21 Page No. : 1/7 Silicon NPN Epitaxial Planar Transistor BTD1858I3Description High BV CEO High current capability Pb-free lead plating package Symbol Outline BTD1858I3 TO-251AB TO-251S BBase CCollector EEmitter B C E B C E Absolute Maximum Ratin