BTD1864I3 - описание и поиск аналогов

Spec. No. C848I3 Issued Date 2003.04.18 CYStech Electronics Corp. Revised Date 2004.06.30 Page No. 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD1864I3 Features Low VCE(sat) Excellent current gain characteristics Complementary to BTB1243I3 Symbol Outline BTD1864I3 TO-251 B Base C Collector B C E Emitter B C E Absolute Maximum

Spec. No. C856T3 Issued Date 2007.03.20 CYStech Electronics Corp. Revised Date Page No. 1/7 Silicon NPN Epitaxial Planar Transistor BTD1858T3 Description High BV CEO High current capability Pb-free package Symbol Outline BTD1858T3 TO-126 B Base C Collector E Emitter B C E Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Limits

Spec. No. C820I3 Issued Date 2004.12.19 CYStech Electronics Corp. Revised Date 2012.09.19 Page No. 1/ 8 Low Vcesat NPN Epitaxial Planar Transistor BTD1805I3 Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Featur

Spec. No. C855M3-R Issued Date 2004.08.06 CYStech Electronics Corp. Revised Date 2013.10.31 Page No. 1/6 Silicon NPN Epitaxial Planar Transistor BVCEO 160V IC 1.5A BTD1857AM3 RCESAT(MAX) 0.3 Description High BV CEO High current capability Complementary to BTB1236AM3 Pb-free lead plating and halogen-free package Symbol Outline BTD1857AM3

Spec. No. C855T3 Issued Date 2004.12.15 CYStech Electronics Corp. Revised Date 2006.06.12 Page No. 1/4 Silicon NPN Epitaxial Planar Transistor BTD1857AT3 Description High BV CEO High current capability Complementary to BTB1236AT3 Pb-free package Symbol Outline BTD1857AT3 TO-126 B Base C Collector E C B E Emitter Absolute Maximum

Spec. No. C855E3 Issued Date 2004.08.06 CYStech Electronics Corp. Revised Date 2013.11.13 Page No. 1/5 Silicon NPN Epitaxial Planar Transistor BTD1857AE3 Description High BV CEO High current capability Complementary to BTB1236AE3 Pb-free lead plating package Symbol Outline BTD1857AE3 TO-220AB B Base C Collector E Emitter B C E

Spec. No. C855I3 Issued Date 2004.09.16 CYStech Electronics Corp. Revised Date 2012.01.16 Page No. 1/5 Silicon NPN Epitaxial Planar Transistor BTD1857AI3 Description High BV CEO High current capability Complementary to BTB1236AI3 RoHS compliant package Symbol Outline BTD1857AI3 TO-251 B Base C Collector E Emitter B C E Absolute Ma

Spec. No. C820J3 Issued Date 2004.12.19 CYStech Electronics Corp. Revised Date 2010.12.08 Page No. 1/ 6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 60V IC 5A BTD1805J3 RCESAT 100m Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with ve

Spec. No. C855D3 Issued Date 2004.09.21 CYStech Electronics Corp. Revised Date 2006.06.12 Page No. 1/4 Silicon NPN Epitaxial Planar Transistor BTD1857AD3 Description High BV CEO High current capability Complementary to BTB1236AD3 Pb-free package Symbol Outline BTD1857AD3 TO-126ML B Base C Collector E Emitter E C B Absolute Maxim

Spec. No. C820T3 Issued Date 2007.07.09 CYStech Electronics Corp. Revised Date Page No. 1/ 4 Low Vcesat NPN Epitaxial Planar Transistor BTD1805BT3 Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features

Spec. No. C821D3 Issued Date 2006.11.23 CYStech Electronics Corp. Revised Date 2012.07.13 Page No. 1/ 7 Low Vcesat NPN Epitaxial Planar Transistor BTD1805AD3 Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Featu

Spec. No. C821I3 Issued Date 2005.10.05 CYStech Electronics Corp. Revised Date 2009.02.04 Page No. 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 100V IC 4A BTD1816I3 RCESAT 50m Features Low collector-to-emitter saturation voltage High-speed switching Large current capability Good linearity of hFE High fT RoHS compliant package

Spec. No. C855J3 Issued Date 2004.10.04 CYStech Electronics Corp. Revised Date 2013.10.31 Page No. 1/6 Silicon NPN Epitaxial Planar Transistor BVCEO 160V IC 1.5A BTD1857AJ3 RCESAT 310m Description High BV CEO High current capability Complementary to BTB1236AJ3 Pb-free lead plating and halogen-free package Symbol Outline BTD1857AJ3 TO-252(DP

Spec. No. C856A3 Issued Date 2006.06.05 CYStech Electronics Corp. Revised Date 2006.06.08 Page No. 1/9 Silicon NPN Epitaxial Planar Transistor BTD1858A3 Description High BV CEO High current capability Pb-free package Symbol Outline BTD1858A3 TO-92 B Base C Collector E Emitter E C B Absolute Maximum Ratings (Ta=25 C) Parameter Symbo

Spec. No. C855J3G Issued Date 2004.10.04 CYStech Electronics Corp. Revised Date 2010.12.08 Page No. 1/7 Silicon NPN Epitaxial Planar Transistor BVCEO 160V IC 1.5A BTD1857AJ3G RCESAT 310m Description High BV CEO High current capability Complementary to BTB1236AJ3G RoHS compliant and Halogen-free package Symbol Outline BTD1857AJ3G TO-252AB TO

Spec. No. C820F3 Issued Date 2011.12.01 CYStech Electronics Corp. Revised Date 2011.12.16 Page No. 1/ 7 Low Vcesat NPN Epitaxial Planar Transistor BTD1805F3 Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Featu

Spec. No. C821J3 Issued Date 2005.03.29 CYStech Electronics Corp. Revised Date 2011.01.19 Page No. 1/8 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 100V IC 4A BTD1816J3 RCESAT 57m (typ) Features Low collector-to-emitter saturation voltage High-speed switching Large current capability Good linearity of hFE High fT RoHS compliant

Spec. No. C855FP Issued Date 2004.08.15 CYStech Electronics Corp. Revised Date 2006.06.12 Page No. 1/4 Silicon NPN Epitaxial Planar Transistor BTD1857AFP Description High BV CEO High current capability Complementary to BTB1236AFP Pb-free package Symbol Outline BTD1857AFP TO-220FP B Base C Collector E Emitter B C E Absolute Maxi

Spec. No. C820FP Issued Date 2005.03.29 CYStech Electronics Corp. Revised Date 2013.10.29 Page No. 1/ 7 Low Vcesat NPN Epitaxial Planar Transistor BTD1805FP Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Featur

Spec. No. C855A3 Issued Date 2004.12.23 CYStech Electronics Corp. Revised Date 2012.05.08 Page No. 1/9 Silicon NPN Epitaxial Planar Transistor BTD1857A3 Description High BV CEO High current capability Complementary to BTB1236A3 Pb-free package Symbol Outline BTD1857A3 TO-92 B Base C Collector E Emitter E C B Absolute Maximum Rat

Spec. No. C820D3 Issued Date 2005.03.29 CYStech Electronics Corp. Revised Date 2005.04.20 Page No. 1/ 4 Low Vcesat NPN Epitaxial Planar Transistor BTD1805D3 Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Featur

Spec. No. C855L3 Issued Date 2005.06.17 CYStech Electronics Corp. Revised Date 2010.12.31 Page No. 1/7 Silicon NPN Epitaxial Planar Transistor BTD1857AL3 Description High BV CEO High current capability Complementary to BTB1236AL3 Pb-free lead plating package Symbol Outline BTD1857AL3 SOT-223 C E C B Base B C Collector E

Spec. No. C856I3 Issued Date 2006.06.21 CYStech Electronics Corp. Revised Date 2012.08.21 Page No. 1/7 Silicon NPN Epitaxial Planar Transistor BTD1858I3 Description High BV CEO High current capability Pb-free lead plating package Symbol Outline BTD1858I3 TO-251AB TO-251S B Base C Collector E Emitter B C E B C E Absolute Maximum Ratin