BTD2057A3 Todos los transistores

 

BTD2057A3 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BTD2057A3

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.75 W

Tensión colector-base (Vcb): 200 V

Tensión colector-emisor (Vce): 200 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 1.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 140 MHz

Capacitancia de salida (Cc): 27 pF

Ganancia de corriente contínua (hFE): 82

Encapsulados: TO-92

 Búsqueda de reemplazo de BTD2057A3

- Selecciónⓘ de transistores por parámetros

 

BTD2057A3 datasheet

 ..1. Size:159K  cystek
btd2057a3.pdf pdf_icon

BTD2057A3

Spec. No. C855A3-A Issued Date 2005.04.29 CYStech Electronics Corp. Revised Date Page No. 1/4 Silicon NPN Epitaxial Planar Transistor BTD2057A3 Description High BV CEO High current capability Pb-free package Symbol Outline BTD2057A3 TO-92 B Base C Collector E Emitter E C B Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Limits

 9.1. Size:227K  cystek
btd2098am3.pdf pdf_icon

BTD2057A3

Spec. No. C847M3 Issued Date 2003.04.17 CYStech Electronics Corp. Revised Date 2013.08.12 Page No. 1/6 Low Vcesat NPN Epitaxial Planar Transistor BTD2098AM3 Features Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A Excellent DC current gain characteristics Complementary to BTB1386AM3 Pb-free package Symbol Outline BTD2098AM3 SOT-89

 9.2. Size:215K  cystek
btd2061fp.pdf pdf_icon

BTD2057A3

Spec. No. C819FP Issued Date 2005.09.07 CYStech Electronics Corp. Revised Date 2012.06.29 Page No. 1/5 Low Vcesat NPN Epitaxial Planar Transistor BTD2061FP Features Low saturation voltage, typically VCE(sat)=0.25V at IC/IB=2A/0.2A. Excellent DC current gain characteristics. Wide SOA(safe operating area). Pb-free package. Symbol Outline BTD2061FP T

 9.3. Size:242K  cystek
btd2098ln3.pdf pdf_icon

BTD2057A3

Spec. No. C850N3 Issued Date 2004.01.28 CYStech Electronics Corp. Revised Date 2012.02.21 Page No. 1/6 Low Vcesat NPN Epitaxial Planar Transistor BTD2098LN3 Features Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 3A / 0.1A Excellent DC current gain characteristics Complementary to BTB1386LN3 Pb-free package Symbol Outline BTD2098LN3 SOT-23

Otros transistores... BTD1857AM3 , BTD1857AT3 , BTD1858A3 , BTD1858I3 , BTD1858T3 , BTD1864I3 , BTD1980J3 , BTD2040N3S , 2SC4793 , BTD2061FP , BTD2098AM3 , BTD2098LN3 , BTD2098M3 , BTD2114N3 , BTD2118LJ3 , BTD2118T3 , BTD2150A3 .

History: 2SB1052 | BTD2150A3

 

 

 


History: 2SB1052 | BTD2150A3

🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550

 

 

 

Popular searches

2n2147 | 2sc870 | 2sa771 | d667 | a965 transistor | hy3210 | d313 transistor equivalent | 2sb827

 

 

↑ Back to Top
.