BTD2114N3 Datasheet. Equivalente

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 btd2114n3.pdf

Spec. No. C857N3 Issued Date 2012.01.02 CYStech Electronics Corp. Revised Date Page No. 1/8 High Current Gain Medium Power NPN Epitaxial Planar Transistor AUDIO MUTING APPLICATION BVCEO 20V BTD2114N3 IC 500mA RCE(SAT) 0.32 (typ) Features High Emitter-Base voltage, VEBO=12V(min). High DC current gain, hFE=1200(min.) @VCE=3V, IC=10mA. Low VCESAT, VCES

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 btd2118t3.pdf

Spec. No. C847T3 Issued Date 2007.06.26 CYStech Electronics Corp. Revised Date Page No. 1/5 Silicon NPN Epitaxial Planar Transistor BTD2118T3 Description High BV CEO High current capability Pb-free package Symbol Outline BTD2118T3 TO-126 B Base C Collector E Emitter E C B Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Limits

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 btd2118lj3.pdf

Spec. No. C850J3 Issued Date 2004.02.27 CYStech Electronics Corp. Revised Date 2006.07.04 Page No. 1/5 Low Vcesat NPN Epitaxial Planar Transistor BTD2118LJ3 Features Low VCE(sat), VCE(sat)=0.2V (typical), at IC / IB = 3A / 0.1A Excellent DC current gain characteristics Complementary to BTB1412LJ3 Pb-free package Symbol Outline BTD2118LJ3 TO-252

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 btd2150am3.pdf

Spec. No. C848M3-A Issued Date 2002.08.18 CYStech Electronics Corp. Revised Date 2013.12.30 Page No. 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 50V IC 3A BTD2150AM3 RCE(SAT) typ. 125m Features Low VCE(sat), VCE(sat)=0.1 V (typical), at IC / IB = 1A / 50mA Excellent current gain characteristics Complementary to BTB1424AM3 Pb-free lead

 9.2. Size:290K  cystek
 btd2150n3.pdf

Spec. No. C848N3-A Issued Date 2004.03.26 CYStech Electronics Corp. Revised Date 2012.11.28 Page No. 1/8 Low V NPN Epitaxial Planar Transistor CE(sat) BVCEO 50V IC 4A BTD2150N3 RCE(SAT) typ. 90m Features Low VCE(sat), typically 0.18V at IC / IB = 2A / 0.1A Excellent current gain characteristics Complementary to BTB1424N3 Pb-free lead plating a

 9.3. Size:241K  cystek
 btd2195m3.pdf

Spec. No. C654M3 Issued Date 2003.07.16 CYStech Electronics Corp. Revised Date 2013.08.12 Page No. 1/7 NPN Epitaxial Planar Transistor BTD2195M3 Description The BTD2195M3 is designed for use in general purpose amplifier and low speed switching application. Pb-free lead plating package process is adopted. Equivalent Circuit Outline BTD2195M3 SOT-89 C B R1 8K R

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 btd2150fp.pdf

Spec. No. C848FP Issued Date 2011.09.14 CYStech Electronics Corp. Revised Date 2011.11.22 Page No. 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 50V IC 3A BTD2150FP RCESAT 125m typ. Features Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB1424FP Pb-free lead plati

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 btd2195t3.pdf

Spec. No. C654T3 Issued Date 2010.09.21 CYStech Electronics Corp. Revised Date Page No. 1/6 NPN Epitaxial Planar Transistor BVCEO 120V IC 4A BTD2195T3 VCE(SAT) 1.5V(max) Description The BTD2195T3 is designed for use in general purpose amplifier and low speed switching application. Pb-free lead plating package process is adopted. Equivalent Circuit Outline TO-126

 9.6. Size:291K  cystek
 btd2195j3.pdf

Spec. No. C654J3 Issued Date 2004.03.18 CYStech Electronics Corp. Revised Date 2010.12.08 Page No. 1/6 NPN Epitaxial Planar Transistor BVCEO 120V IC 4A BTD2195J3 RCESAT 600m Description The BTD2195J3 is a NPN Darlington transistor, designed for use in general purpose amplifier and low speed switching application. RoHS compliant package process is adopted. Equiva

 9.7. Size:261K  cystek
 btd2150l3.pdf

Spec. No. C848L3 Issued Date 2004.10.07 CYStech Electronics Corp. Revised Date 2010.11.05 Page No. 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 50V IC 3A BTD2150L3 RCESAT (Max) 145m Features Low V , V = 0.25V (typical), at I /I =2A/0.2A CE(sat) CE(sat) C B Excellent current gain characteristics Complementary to BTB1424L3 Pb-free package

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 btd2150a3.pdf

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 btd2150ad3.pdf

Spec. No. C848D3 Issued Date 2004.07.06 CYStech Electronics Corp. Revised Date 2005.11.16 Page No. 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD2150AD3 Features Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 200mA Excellent current gain characteristics Complementary to BTB1424AD3 Pb-free package Symbol Outline TO-126ML BTD2150A

 9.10. Size:320K  cystek
 btd2195l3.pdf

Spec. No. C654L3 Issued Date 2007.02.09 CYStech Electronics Corp. Revised Date 2014.04.07 Page No. 1/6 NPN Epitaxial Planar Transistor BTD2195L3 Description The BTD2195L3 is a NPN Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Pb-free package process is adopted. Equivalent Circuit Outline BTD2195L3 SOT-223