Биполярный транзистор BTD2114N3 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BTD2114N3
Маркировка: BBW
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.225 W
Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 12 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 300 MHz
Ёмкость коллекторного перехода (Cc): 9 pf
Статический коэффициент передачи тока (hfe): 1200
Корпус транзистора: SOT-23
Аналоги (замена) для BTD2114N3
BTD2114N3 Datasheet (PDF)
btd2114n3.pdf
Spec. No. : C857N3 Issued Date : 2012.01.02 CYStech Electronics Corp.Revised Date : Page No. : 1/8 High Current Gain Medium Power NPN Epitaxial Planar Transistor AUDIO MUTING APPLICATION BVCEO 20VBTD2114N3 IC 500mARCE(SAT) 0.32(typ) Features High Emitter-Base voltage, VEBO=12V(min). High DC current gain, hFE=1200(min.) @VCE=3V, IC=10mA. Low VCESAT, VCES
btd2118t3.pdf
Spec. No. : C847T3 Issued Date : 2007.06.26 CYStech Electronics Corp.Revised Date : Page No. : 1/5 Silicon NPN Epitaxial Planar Transistor BTD2118T3Description High BV CEO High current capability Pb-free package Symbol Outline BTD2118T3 TO-126 BBase CCollector EEmitter E C B Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limits
btd2118lj3.pdf
Spec. No. : C850J3 Issued Date : 2004.02.27 CYStech Electronics Corp.Revised Date :2006.07.04 Page No. : 1/5 Low Vcesat NPN Epitaxial Planar Transistor BTD2118LJ3 Features Low VCE(sat), VCE(sat)=0.2V (typical), at IC / IB = 3A / 0.1A Excellent DC current gain characteristics Complementary to BTB1412LJ3 Pb-free package Symbol Outline BTD2118LJ3 TO-252
btd2150am3.pdf
Spec. No. : C848M3-A Issued Date : 2002.08.18 CYStech Electronics Corp.Revised Date : 2013.12.30 Page No. : 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 50VIC 3ABTD2150AM3 RCE(SAT) typ. 125m Features Low VCE(sat), VCE(sat)=0.1 V (typical), at IC / IB = 1A / 50mA Excellent current gain characteristics Complementary to BTB1424AM3 Pb-free lead
btd2150n3.pdf
Spec. No. : C848N3-A Issued Date : 2004.03.26 CYStech Electronics Corp.Revised Date : 2012.11.28 Page No. : 1/8 Low V NPN Epitaxial Planar Transistor CE(sat)BVCEO 50VIC 4ABTD2150N3 RCE(SAT) typ. 90m Features Low VCE(sat), typically 0.18V at IC / IB = 2A / 0.1A Excellent current gain characteristics Complementary to BTB1424N3 Pb-free lead plating a
btd2195m3.pdf
Spec. No. : C654M3 Issued Date : 2003.07.16 CYStech Electronics Corp.Revised Date :2013.08.12 Page No. : 1/7 NPN Epitaxial Planar Transistor BTD2195M3 Description The BTD2195M3 is designed for use in general purpose amplifier and low speed switching application. Pb-free lead plating package process is adopted. Equivalent Circuit Outline BTD2195M3 SOT-89 C B R18K R
btd2150fp.pdf
Spec. No. : C848FP Issued Date : 2011.09.14 CYStech Electronics Corp.Revised Date : 2011.11.22 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 50V IC 3ABTD2150FP RCESAT 125m typ.Features Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB1424FP Pb-free lead plati
btd2195t3.pdf
Spec. No. : C654T3 Issued Date : 2010.09.21 CYStech Electronics Corp.Revised Date : Page No. : 1/6 NPN Epitaxial Planar Transistor BVCEO 120VIC 4ABTD2195T3 VCE(SAT) 1.5V(max)Description The BTD2195T3 is designed for use in general purpose amplifier and low speed switching application. Pb-free lead plating package process is adopted. Equivalent Circuit Outline TO-126
btd2195j3.pdf
Spec. No. : C654J3 Issued Date : 2004.03.18 CYStech Electronics Corp.Revised Date :2010.12.08 Page No. : 1/6 NPN Epitaxial Planar Transistor BVCEO 120VIC 4ABTD2195J3 RCESAT 600m Description The BTD2195J3 is a NPN Darlington transistor, designed for use in general purpose amplifier and low speed switching application. RoHS compliant package process is adopted. Equiva
btd2150l3.pdf
Spec. No. : C848L3 Issued Date : 2004.10.07 CYStech Electronics Corp.Revised Date :2010.11.05 Page No. : 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 50VIC 3ABTD2150L3 RCESAT (Max) 145m Features Low V , V = 0.25V (typical), at I /I =2A/0.2A CE(sat) CE(sat) C B Excellent current gain characteristics Complementary to BTB1424L3 Pb-free package
btd2150a3.pdf
Spec. No. : C848A3 Issued Date : 2005.02.04 CYStech Electronics Corp.Revised Date :2010.11.05 Page No. : 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 50VIC 3ABTD2150A3 RCESAT (Typ) 125m Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 100mA 0.1V at IC / IB = 1A / 50mA Excellent current gain characteristics Complementary to BTB1424A3
btd2150ad3.pdf
Spec. No. : C848D3 Issued Date : 2004.07.06 CYStech Electronics Corp.Revised Date : 2005.11.16 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD2150AD3 Features Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 200mA Excellent current gain characteristics Complementary to BTB1424AD3 Pb-free package Symbol Outline TO-126ML BTD2150A
btd2195l3.pdf
Spec. No. : C654L3 Issued Date : 2007.02.09 CYStech Electronics Corp.Revised Date : 2014.04.07 Page No. : 1/6 NPN Epitaxial Planar Transistor BTD2195L3 Description The BTD2195L3 is a NPN Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Pb-free package process is adopted. Equivalent Circuit Outline BTD2195L3 SOT-223
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