BTD2150N3 Todos los transistores

 

BTD2150N3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BTD2150N3
   Código: CF
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.225 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 175 MHz
   Capacitancia de salida (Cc): 14 pF
   Ganancia de corriente contínua (hfe): 270
   Paquete / Cubierta: SOT-23
 
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BTD2150N3 Datasheet (PDF)

 ..1. Size:290K  cystek
btd2150n3.pdf pdf_icon

BTD2150N3

Spec. No. : C848N3-A Issued Date : 2004.03.26 CYStech Electronics Corp.Revised Date : 2012.11.28 Page No. : 1/8 Low V NPN Epitaxial Planar Transistor CE(sat)BVCEO 50VIC 4ABTD2150N3 RCE(SAT) typ. 90m Features Low VCE(sat), typically 0.18V at IC / IB = 2A / 0.1A Excellent current gain characteristics Complementary to BTB1424N3 Pb-free lead plating a

 7.1. Size:250K  cystek
btd2150am3.pdf pdf_icon

BTD2150N3

Spec. No. : C848M3-A Issued Date : 2002.08.18 CYStech Electronics Corp.Revised Date : 2013.12.30 Page No. : 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 50VIC 3ABTD2150AM3 RCE(SAT) typ. 125m Features Low VCE(sat), VCE(sat)=0.1 V (typical), at IC / IB = 1A / 50mA Excellent current gain characteristics Complementary to BTB1424AM3 Pb-free lead

 7.2. Size:182K  cystek
btd2150fp.pdf pdf_icon

BTD2150N3

Spec. No. : C848FP Issued Date : 2011.09.14 CYStech Electronics Corp.Revised Date : 2011.11.22 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 50V IC 3ABTD2150FP RCESAT 125m typ.Features Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB1424FP Pb-free lead plati

 7.3. Size:261K  cystek
btd2150l3.pdf pdf_icon

BTD2150N3

Spec. No. : C848L3 Issued Date : 2004.10.07 CYStech Electronics Corp.Revised Date :2010.11.05 Page No. : 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 50VIC 3ABTD2150L3 RCESAT (Max) 145m Features Low V , V = 0.25V (typical), at I /I =2A/0.2A CE(sat) CE(sat) C B Excellent current gain characteristics Complementary to BTB1424L3 Pb-free package

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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