BTD2150N3 Todos los transistores

 

BTD2150N3 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BTD2150N3

Código: CF

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.225 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 175 MHz

Capacitancia de salida (Cc): 14 pF

Ganancia de corriente contínua (hFE): 270

Encapsulados: SOT-23

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BTD2150N3 datasheet

 ..1. Size:290K  cystek
 btd2150n3.pdf pdf_icon

BTD2150N3

Spec. No. C848N3-A Issued Date 2004.03.26 CYStech Electronics Corp. Revised Date 2012.11.28 Page No. 1/8 Low V NPN Epitaxial Planar Transistor CE(sat) BVCEO 50V IC 4A BTD2150N3 RCE(SAT) typ. 90m Features Low VCE(sat), typically 0.18V at IC / IB = 2A / 0.1A Excellent current gain characteristics Complementary to BTB1424N3 Pb-free lead plating a

 7.1. Size:250K  cystek
 btd2150am3.pdf pdf_icon

BTD2150N3

Spec. No. C848M3-A Issued Date 2002.08.18 CYStech Electronics Corp. Revised Date 2013.12.30 Page No. 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 50V IC 3A BTD2150AM3 RCE(SAT) typ. 125m Features Low VCE(sat), VCE(sat)=0.1 V (typical), at IC / IB = 1A / 50mA Excellent current gain characteristics Complementary to BTB1424AM3 Pb-free lead

 7.2. Size:182K  cystek
 btd2150fp.pdf pdf_icon

BTD2150N3

Spec. No. C848FP Issued Date 2011.09.14 CYStech Electronics Corp. Revised Date 2011.11.22 Page No. 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 50V IC 3A BTD2150FP RCESAT 125m typ. Features Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB1424FP Pb-free lead plati

 7.3. Size:261K  cystek
 btd2150l3.pdf pdf_icon

BTD2150N3

Spec. No. C848L3 Issued Date 2004.10.07 CYStech Electronics Corp. Revised Date 2010.11.05 Page No. 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 50V IC 3A BTD2150L3 RCESAT (Max) 145m Features Low V , V = 0.25V (typical), at I /I =2A/0.2A CE(sat) CE(sat) C B Excellent current gain characteristics Complementary to BTB1424L3 Pb-free package

MOSTRAR MÁS

Otros transistores... BTD2114N3 , BTD2118LJ3 , BTD2118T3 , BTD2150A3 , BTD2150AD3 , BTD2150AM3 , BTD2150FP , BTD2150L3 , TIP127 , BTD2195J3 , BTD2195L3 , BTD2195M3 , BTD2195T3 , BTD2444L3 , BTD2444N3 , BTD2444S3 , BTD2498N3 .

History: MM1152 | BD954F

 

 

 

 

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