BTD2150N3 - аналоги, параметры транзистора - Справочник транзисторов

BTD2150N3 даташит

..1. Size:290K cystek
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Spec. No. C848N3-A Issued Date 2004.03.26 CYStech Electronics Corp. Revised Date 2012.11.28 Page No. 1/8 Low V NPN Epitaxial Planar Transistor CE(sat) BVCEO 50V IC 4A BTD2150N3 RCE(SAT) typ. 90m Features Low VCE(sat), typically 0.18V at IC / IB = 2A / 0.1A Excellent current gain characteristics Complementary to BTB1424N3 Pb-free lead plating a

7.1. Size:250K cystek
btd2150am3.pdf pdf_icon

Spec. No. C848M3-A Issued Date 2002.08.18 CYStech Electronics Corp. Revised Date 2013.12.30 Page No. 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 50V IC 3A BTD2150AM3 RCE(SAT) typ. 125m Features Low VCE(sat), VCE(sat)=0.1 V (typical), at IC / IB = 1A / 50mA Excellent current gain characteristics Complementary to BTB1424AM3 Pb-free lead

7.2. Size:182K cystek
btd2150fp.pdf pdf_icon

Spec. No. C848FP Issued Date 2011.09.14 CYStech Electronics Corp. Revised Date 2011.11.22 Page No. 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 50V IC 3A BTD2150FP RCESAT 125m typ. Features Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB1424FP Pb-free lead plati

7.3. Size:261K cystek
btd2150l3.pdf pdf_icon

Spec. No. C848L3 Issued Date 2004.10.07 CYStech Electronics Corp. Revised Date 2010.11.05 Page No. 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 50V IC 3A BTD2150L3 RCESAT (Max) 145m Features Low V , V = 0.25V (typical), at I /I =2A/0.2A CE(sat) CE(sat) C B Excellent current gain characteristics Complementary to BTB1424L3 Pb-free package