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BTD2195L3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BTD2195L3
   Código: DP
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 5 W
   Tensión colector-base (Vcb): 130 V
   Tensión colector-emisor (Vce): 120 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 200 pF
   Ganancia de corriente contínua (hfe): 500
   Paquete / Cubierta: SOT-223
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BTD2195L3 Datasheet (PDF)

 ..1. Size:320K  cystek
btd2195l3.pdf pdf_icon

BTD2195L3

Spec. No. : C654L3 Issued Date : 2007.02.09 CYStech Electronics Corp.Revised Date : 2014.04.07 Page No. : 1/6 NPN Epitaxial Planar Transistor BTD2195L3 Description The BTD2195L3 is a NPN Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Pb-free package process is adopted. Equivalent Circuit Outline BTD2195L3 SOT-223

 7.1. Size:241K  cystek
btd2195m3.pdf pdf_icon

BTD2195L3

Spec. No. : C654M3 Issued Date : 2003.07.16 CYStech Electronics Corp.Revised Date :2013.08.12 Page No. : 1/7 NPN Epitaxial Planar Transistor BTD2195M3 Description The BTD2195M3 is designed for use in general purpose amplifier and low speed switching application. Pb-free lead plating package process is adopted. Equivalent Circuit Outline BTD2195M3 SOT-89 C B R18K R

 7.2. Size:235K  cystek
btd2195t3.pdf pdf_icon

BTD2195L3

Spec. No. : C654T3 Issued Date : 2010.09.21 CYStech Electronics Corp.Revised Date : Page No. : 1/6 NPN Epitaxial Planar Transistor BVCEO 120VIC 4ABTD2195T3 VCE(SAT) 1.5V(max)Description The BTD2195T3 is designed for use in general purpose amplifier and low speed switching application. Pb-free lead plating package process is adopted. Equivalent Circuit Outline TO-126

 7.3. Size:291K  cystek
btd2195j3.pdf pdf_icon

BTD2195L3

Spec. No. : C654J3 Issued Date : 2004.03.18 CYStech Electronics Corp.Revised Date :2010.12.08 Page No. : 1/6 NPN Epitaxial Planar Transistor BVCEO 120VIC 4ABTD2195J3 RCESAT 600m Description The BTD2195J3 is a NPN Darlington transistor, designed for use in general purpose amplifier and low speed switching application. RoHS compliant package process is adopted. Equiva

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