BTD2444L3. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

BTD2444L3 datasheet

..1. Size:261K cystek
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Spec. No. C223L3 Issued Date 2011.01.03 CYStech Electronics Corp. Revised Date 2012.10.03 Page No. 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 20V IC 1A BTD2444L3 RCESAT 0.35 (typ.) Features The BTD2444L3 is designed for general purpose low frequency power amplifier applications. Low VCE(sat), VCE(sat)=0.35V (typ), at IC / IB = 1A / 50mA Com

7.1. Size:275K cystek
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Spec. No. C223N3 Issued Date 2003.05.26 CYStech Electronics Corp. Revised Date 2012.10.03 Page No. 1/8 Low Vcesat NPN Epitaxial Planar Transistor BTD2444N3 Features The BTD2444N3 is designed for general purpose low frequency power amplifier applications. Low VCE(sat), VCE(sat)=40mV (typical), at IC / IB = 50mA / 2.5mA Complementary to BTB1590N3 Pb-f

7.2. Size:257K cystek
btd2444s3.pdf pdf_icon

Spec. No. C223S3-R Issued Date 2005.06.29 CYStech Electronics Corp. Revised Date 2010.10.03 Page No. 1/8 Low Vcesat NPN Epitaxial Planar Transistor BTD2444S3 Features The BTD2444S3 is designed for general purpose low frequency power amplifier applications. Low VCE(sat), VCE(sat)=40mV (typical), at IC / IB = 50mA / 2.5mA Pb-free lead plating and halogen-fre

9.1. Size:259K cystek
btd2498n3.pdf pdf_icon

Spec. No. C899N3 Issued Date 2009.12.23 CYStech Electronics Corp. Revised Date Page No. 1/6 High Voltage NPN Epitaxial Planar Transistor Built-in Base Resistor BTD2498N3 Description High breakdown voltage. (BV =400V) CEO Low saturation voltage, typical V =0.13V at Ic/I =20mA/1mA. CE(sat) B Complementary to BTB1498N3 Pb-free package Equivalent

Otros transistores... BTD2150AM3 , BTD2150FP , BTD2150L3 , BTD2150N3 , BTD2195J3 , BTD2195L3 , BTD2195M3 , BTD2195T3 , 8550 , BTD2444N3 , BTD2444S3 , BTD2498N3 , BTD2510F3 , BTD2568L3 , BTD4512F3 , BTD5213J3 , BTD5213L3 .