BTD2444N3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Spec. No. : C223N3 Issued Date : 2003.05.26 CYStech Electronics Corp.Revised Date : 2012.10.03 Page No. : 1/8 Low Vcesat NPN Epitaxial Planar Transistor BTD2444N3 Features The BTD2444N3 is designed for general purpose low frequency power amplifier applications. Low VCE(sat), VCE(sat)=40mV (typical), at IC / IB = 50mA / 2.5mA Complementary to BTB1590N3 Pb-f

Spec. No. : C223S3-R Issued Date : 2005.06.29 CYStech Electronics Corp.Revised Date :2010.10.03 Page No. : 1/8 Low Vcesat NPN Epitaxial Planar Transistor BTD2444S3 Features The BTD2444S3 is designed for general purpose low frequency power amplifier applications. Low VCE(sat), VCE(sat)=40mV (typical), at IC / IB = 50mA / 2.5mA Pb-free lead plating and halogen-fre

Spec. No. : C223L3 Issued Date : 2011.01.03 CYStech Electronics Corp.Revised Date : 2012.10.03 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 20VIC 1ABTD2444L3 RCESAT 0.35(typ.) Features The BTD2444L3 is designed for general purpose low frequency power amplifier applications. Low VCE(sat), VCE(sat)=0.35V (typ), at IC / IB = 1A / 50mA Com

Spec. No. : C899N3 Issued Date : 2009.12.23 CYStech Electronics Corp.Revised Date : Page No. : 1/6 High Voltage NPN Epitaxial Planar Transistor Built-in Base Resistor BTD2498N3 Description High breakdown voltage. (BV =400V) CEO Low saturation voltage, typical V =0.13V at Ic/I =20mA/1mA. CE(sat) B Complementary to BTB1498N3 Pb-free package Equivalent