BTD2444N3 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

BTD2444N3 Specs and Replacement

Type Designator: BTD2444N3

SMD Transistor Code: BS

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.225 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 15 pF

Forward Current Transfer Ratio (hFE), MIN: 180

Noise Figure, dB: -

Package: SOT-23

BTD2444N3 Substitution

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BTD2444N3 datasheet

..1. Size:275K cystek

btd2444n3.pdf pdf_icon

Spec. No. C223N3 Issued Date 2003.05.26 CYStech Electronics Corp. Revised Date 2012.10.03 Page No. 1/8 Low Vcesat NPN Epitaxial Planar Transistor BTD2444N3 Features The BTD2444N3 is designed for general purpose low frequency power amplifier applications. Low VCE(sat), VCE(sat)=40mV (typical), at IC / IB = 50mA / 2.5mA Complementary to BTB1590N3 Pb-f... See More ⇒

7.1. Size:257K cystek

btd2444s3.pdf pdf_icon

Spec. No. C223S3-R Issued Date 2005.06.29 CYStech Electronics Corp. Revised Date 2010.10.03 Page No. 1/8 Low Vcesat NPN Epitaxial Planar Transistor BTD2444S3 Features The BTD2444S3 is designed for general purpose low frequency power amplifier applications. Low VCE(sat), VCE(sat)=40mV (typical), at IC / IB = 50mA / 2.5mA Pb-free lead plating and halogen-fre... See More ⇒

7.2. Size:261K cystek

btd2444l3.pdf pdf_icon

Spec. No. C223L3 Issued Date 2011.01.03 CYStech Electronics Corp. Revised Date 2012.10.03 Page No. 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 20V IC 1A BTD2444L3 RCESAT 0.35 (typ.) Features The BTD2444L3 is designed for general purpose low frequency power amplifier applications. Low VCE(sat), VCE(sat)=0.35V (typ), at IC / IB = 1A / 50mA Com... See More ⇒

9.1. Size:259K cystek

btd2498n3.pdf pdf_icon

Spec. No. C899N3 Issued Date 2009.12.23 CYStech Electronics Corp. Revised Date Page No. 1/6 High Voltage NPN Epitaxial Planar Transistor Built-in Base Resistor BTD2498N3 Description High breakdown voltage. (BV =400V) CEO Low saturation voltage, typical V =0.13V at Ic/I =20mA/1mA. CE(sat) B Complementary to BTB1498N3 Pb-free package Equivalent ... See More ⇒

Detailed specifications: BTD2150FP, BTD2150L3, BTD2150N3, BTD2195J3, BTD2195L3, BTD2195M3, BTD2195T3, BTD2444L3, 9014, BTD2444S3, BTD2498N3, BTD2510F3, BTD2568L3, BTD4512F3, BTD5213J3, BTD5213L3, BTD5213M3