BTN1053M3 Todos los transistores

 

BTN1053M3 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BTN1053M3

Código: CB

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 2 W

Tensión colector-base (Vcb): 150 V

Tensión colector-emisor (Vce): 75 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 2.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 140 MHz

Capacitancia de salida (Cc): 23 pF

Ganancia de corriente contínua (hFE): 300

Encapsulados: SOT-89

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BTN1053M3 datasheet

 ..1. Size:262K  cystek
btn1053m3.pdf pdf_icon

BTN1053M3

Spec. No. C818M3 Issued Date 2003.04.04 CYStech Electronics Corp. Revised Date 2013.08.12 Page No. 1/8 NPN Epitaxial Planar Transistor BVCEO 75V IC 2.5A BTN1053M3 RCESAT(MAX) 250m Features 2W power dissipation Excellent H Characteristics up to 1A FE Low Saturation Voltage, V =0.15V(typ)@I =1A, I =50mA CE(sat) C B 5A peak pulse current Pb

 7.1. Size:152K  cystek
btn1053l3.pdf pdf_icon

BTN1053M3

Spec. No. C818L3 Issued Date 2003.08.13 CYStech Electronics Corp. Revised Date Page No. 1/5 NPN Epitaxial Planar Transistor BTN1053L3 Features 5W power dissipation Excellent H Characteristics up to 1A FE Low Saturation Voltage VCE(sat)=0.15V(typ)(IC=1A,IB=50mA). 5A peak pulse current Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Limits

 7.2. Size:297K  cystek
btn1053k3.pdf pdf_icon

BTN1053M3

Spec. No. C818K3 Issued Date 2013.10.01 CYStech Electronics Corp. Revised Date 2013.12.25 Page No. 1/8 NPN Epitaxial Planar Transistor BVCEO 75V IC 2.5A BTN1053K3 RCESAT(MAX) 250m Features Excellent H Characteristics up to 1A FE Low Saturation Voltage, V =0.15V(typ)@I =1A, I =50mA CE(sat) C B 5A peak pulse current Pb-free lead plating and hal

 7.3. Size:302K  cystek
btn1053i3.pdf pdf_icon

BTN1053M3

Spec. No. C818I3 Issued Date 2010.01.26 CYStech Electronics Corp. Revised Date 2014.02.26 Page No. 1/7 NPN Epitaxial Planar Transistor BVCEO 80V IC 2.5A BTN1053I3 RCESAT(MAX) 150m Features Excellent H Characteristics up to 1A FE Low Saturation Voltage, V =0.11V(typ)@I =1A, I =50mA CE(sat) C B 5A peak pulse current Pb-free lead plating and hal

Otros transistores... BTD8530F3 , BTD9065D3 , BTN3A60T3 , BTN853L3 , BTN1053A3 , BTN1053I3 , BTN1053K3 , BTN1053L3 , TIP142 , BTN1101E3 , BTN2222A3 , BTN2222AL3 , BTN2222AN3 , BTN2369A3 , BTN2369N3 , BTN2369S3 , BTN3501E3 .

 

 

 


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