All Transistors. BTN1053M3 Datasheet

 

BTN1053M3 Datasheet and Replacement


   Type Designator: BTN1053M3
   SMD Transistor Code: CB
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 75 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 140 MHz
   Collector Capacitance (Cc): 23 pF
   Forward Current Transfer Ratio (hFE), MIN: 300
   Noise Figure, dB: -
   Package: SOT-89
 

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BTN1053M3 Datasheet (PDF)

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 btn1053m3.pdf pdf_icon

BTN1053M3

Spec. No. : C818M3 Issued Date : 2003.04.04 CYStech Electronics Corp.Revised Date :2013.08.12 Page No. : 1/8 NPN Epitaxial Planar TransistorBVCEO 75VIC 2.5ABTN1053M3RCESAT(MAX) 250m Features 2W power dissipation Excellent H Characteristics up to 1A FE Low Saturation Voltage, V =0.15V(typ)@I =1A, I =50mA CE(sat) C B 5A peak pulse current Pb

 7.1. Size:152K  cystek
 btn1053l3.pdf pdf_icon

BTN1053M3

Spec. No. : C818L3 Issued Date : 2003.08.13 CYStech Electronics Corp. Revised Date : Page No. : 1/5 NPN Epitaxial Planar TransistorBTN1053L3 Features 5W power dissipation Excellent H Characteristics up to 1A FE Low Saturation Voltage VCE(sat)=0.15V(typ)(IC=1A,IB=50mA). 5A peak pulse current Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limits

 7.2. Size:297K  cystek
 btn1053k3.pdf pdf_icon

BTN1053M3

Spec. No. : C818K3 Issued Date : 2013.10.01 CYStech Electronics Corp.Revised Date : 2013.12.25 Page No. : 1/8 NPN Epitaxial Planar TransistorBVCEO 75VIC 2.5ABTN1053K3RCESAT(MAX) 250m Features Excellent H Characteristics up to 1A FE Low Saturation Voltage, V =0.15V(typ)@I =1A, I =50mA CE(sat) C B 5A peak pulse current Pb-free lead plating and hal

 7.3. Size:302K  cystek
 btn1053i3.pdf pdf_icon

BTN1053M3

Spec. No. : C818I3 Issued Date : 2010.01.26 CYStech Electronics Corp.Revised Date : 2014.02.26 Page No. : 1/7 NPN Epitaxial Planar TransistorBVCEO 80VIC 2.5ABTN1053I3RCESAT(MAX) 150m Features Excellent H Characteristics up to 1A FE Low Saturation Voltage, V =0.11V(typ)@I =1A, I =50mA CE(sat) C B 5A peak pulse current Pb-free lead plating and hal

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Datasheet: BTD8530F3 , BTD9065D3 , BTN3A60T3 , BTN853L3 , BTN1053A3 , BTN1053I3 , BTN1053K3 , BTN1053L3 , A1266 , BTN1101E3 , BTN2222A3 , BTN2222AL3 , BTN2222AN3 , BTN2369A3 , BTN2369N3 , BTN2369S3 , BTN3501E3 .

Keywords - BTN1053M3 transistor datasheet

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