BTN1053M3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTN1053M3
SMD Transistor Code: CB
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 75 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 140 MHz
Collector Capacitance (Cc): 23 pF
Forward Current Transfer Ratio (hFE), MIN: 300
Noise Figure, dB: -
Package: SOT-89
BTN1053M3 Transistor Equivalent Substitute - Cross-Reference Search
BTN1053M3 Datasheet (PDF)
btn1053m3.pdf
Spec. No. : C818M3 Issued Date : 2003.04.04 CYStech Electronics Corp.Revised Date :2013.08.12 Page No. : 1/8 NPN Epitaxial Planar TransistorBVCEO 75VIC 2.5ABTN1053M3RCESAT(MAX) 250m Features 2W power dissipation Excellent H Characteristics up to 1A FE Low Saturation Voltage, V =0.15V(typ)@I =1A, I =50mA CE(sat) C B 5A peak pulse current Pb
btn1053l3.pdf
Spec. No. : C818L3 Issued Date : 2003.08.13 CYStech Electronics Corp. Revised Date : Page No. : 1/5 NPN Epitaxial Planar TransistorBTN1053L3 Features 5W power dissipation Excellent H Characteristics up to 1A FE Low Saturation Voltage VCE(sat)=0.15V(typ)(IC=1A,IB=50mA). 5A peak pulse current Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limits
btn1053k3.pdf
Spec. No. : C818K3 Issued Date : 2013.10.01 CYStech Electronics Corp.Revised Date : 2013.12.25 Page No. : 1/8 NPN Epitaxial Planar TransistorBVCEO 75VIC 2.5ABTN1053K3RCESAT(MAX) 250m Features Excellent H Characteristics up to 1A FE Low Saturation Voltage, V =0.15V(typ)@I =1A, I =50mA CE(sat) C B 5A peak pulse current Pb-free lead plating and hal
btn1053i3.pdf
Spec. No. : C818I3 Issued Date : 2010.01.26 CYStech Electronics Corp.Revised Date : 2014.02.26 Page No. : 1/7 NPN Epitaxial Planar TransistorBVCEO 80VIC 2.5ABTN1053I3RCESAT(MAX) 150m Features Excellent H Characteristics up to 1A FE Low Saturation Voltage, V =0.11V(typ)@I =1A, I =50mA CE(sat) C B 5A peak pulse current Pb-free lead plating and hal
btn1053a3.pdf
Spec. No. : C818A3 Issued Date : 2013.05.22 CYStech Electronics Corp.Revised Date : 2013.06.25 Page No. : 1/7 Low Vcesat NPN Epitaxial Planar Transistor BTN1053A3 Features Excellent H Characteristics up to 1A FE Low Saturation Voltage, V =0.1V(typ)@I =1A, I =50mA CE(sat) C B 5A peak pulse current Pb-free lead plating and halogen-free package Symbol Outl
Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , TIP142 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
