2N6431 Todos los transistores

 ..1. Size:104K  central
 2n6430 2n6431 2n6432 2n6433.pdf

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 www.centralsemi.com

 9.1. Size:298K  rca
 2n583 2n584 2n640 2n641 2n642 2n643 2n644 2n645 2n656 2n696.pdf

 9.2. Size:127K  motorola
 2n6439re.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6439/D The RF Line NPN Silicon 2N6439 RF Power Transistor . . . designed primarily for wideband large signal output amplifier stages in the 225 to 400 MHz frequency range. Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc Output Power = 60 Watts over 225 to 400 MHz Band 60 W, 225 to 400 MHz Min

 9.3. Size:178K  motorola
 2n6436 2n6437 2n6438.pdf

Order this document MOTOROLA by 2N6436/D SEMICONDUCTOR TECHNICAL DATA 2N6436 High-Power PNP Silicon 2N6437 Transistors 2N6438 * . . . designed for use in industrial military power amplifier and switching circuit *Motorola Preferred Device applications. High Collector Emitter Sustaining Voltage 25 AMPERE VCEO(sus) = 80 Vdc (Min) 2N6436 POWER TRANSISTORS VCEO(sus)

 9.4. Size:137K  macom
 2n6439.pdf

Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6439/D The RF Line NPN Silicon 2N6439 RF Power Transistor . . . designed primarily for wideband large signal output amplifier stages in the 225 to 400 MHz frequency range. Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc Output Power = 60 Watts over 225 to 400 MHz Band 60 W, 225 to 400 MHz Minimum Gain

 9.5. Size:198K  bocasemi
 2n6436 2n6437 2n6438.pdf

A Boca Semiconductor Corp BSC http //www.bocasemi.com A Boca Semiconductor Corp BSC http //www.bocasemi.com A Boca Semiconductor Corp BSC http //www.bocasemi.com A Boca Semiconductor Corp BSC http //www.bocasemi.com

 9.6. Size:257K  cdil
 2n6430 31.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON TRANSISTORS 2N6430, 6431 TO-18 Metal Can Package General Purpose Transistors. ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL 2N6430 2N6431 UNIT VCEO Collector Emitter Voltage 200 300 V VCBO Collector Base Voltage 200 300 V VEBO Emitter Base Volta

 9.7. Size:118K  inchange semiconductor
 2n6436 2n6437 2n6438.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6436 2N6437 2N6438 DESCRIPTION With TO-3 package High DC current gain Fast switching times Low collector saturation voltage Complement to type 2N6338 2N6341 APPLICATIONS For use in industrial-military power amplifier and switching circuit applications PINNING(see Fig.2) PIN DESCRIPT