2N6431 Specs and Replacement
Type Designator: 2N6431
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO18
2N6431 Substitution
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2N6431 datasheet
2n6430 2n6431 2n6432 2n6433.pdf ![]()
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 www.centralsemi.com ... See More ⇒
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6439/D The RF Line NPN Silicon 2N6439 RF Power Transistor . . . designed primarily for wideband large signal output amplifier stages in the 225 to 400 MHz frequency range. Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc Output Power = 60 Watts over 225 to 400 MHz Band 60 W, 225 to 400 MHz Min... See More ⇒
Order this document MOTOROLA by 2N6436/D SEMICONDUCTOR TECHNICAL DATA 2N6436 High-Power PNP Silicon 2N6437 Transistors 2N6438 * . . . designed for use in industrial military power amplifier and switching circuit *Motorola Preferred Device applications. High Collector Emitter Sustaining Voltage 25 AMPERE VCEO(sus) = 80 Vdc (Min) 2N6436 POWER TRANSISTORS VCEO(sus)... See More ⇒
Detailed specifications: 2N6426, 2N6427, 2N6428, 2N6428A, 2N6429, 2N6429A, 2N643, 2N6430, TIP122, 2N6432, 2N6433, 2N6436, 2N6436A, 2N6437, 2N6437A, 2N6438, 2N6438A
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