BTNA42A3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BTNA42A3
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.625 W
Tensión colector-base (Vcb): 300 V
Tensión colector-emisor (Vce): 300 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 3 pF
Ganancia de corriente contínua (hfe): 90
Paquete / Cubierta: TO-92
Búsqueda de reemplazo de transistor bipolar BTNA42A3
BTNA42A3 Datasheet (PDF)
btna42a3.pdf
Spec. No. : C209A3-H Issued Date : 2003.03.18 CYStech Electronics Corp.Revised Date : 2013.11.06 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BTNA42A3Description High breakdown voltage. (BV =300V) CEO Low collector output capacitance. (Typ. 3pF at V =30V) CB Ideal for chroma circuit. Pb-free lead plating and halogen-free package Symbo
btna45a3.pdf
Spec. No. : C241A3 Issued Date : 2011.06.10 CYStech Electronics Corp.Revised Date : 2013.11.22 Page No. : 1/7 NPN High Voltage Planar Transistor BVCEO 500VIC 150mABTNA45A3VCESAT 150mV (max)Description High breakdown voltage. (BV =500V) CEO Low collector-emitter saturation voltage V . CESAT High collector current capability I and I . C CM High coll
btna44m3.pdf
Spec. No. : C211M3 Issued Date : 2013.05.09 CYStech Electronics Corp.Revised Date : 2013.08.05 Page No. : 1/6 High Voltage NPN Epitaxial Planar Transistor BTNA44M3 Features High breakdown voltage. (BV = 400V) CEO Low saturation voltage, typically V C BCE(sat) = 60mV at I /I =10mA/1mA. Complementary to BTPA94M3 Symbol Outline BTNA44M3 SOT-89 BBase
btna44a3.pdf
Spec. No. : C211A3 Issued Date : 2003.03.026 CYStech Electronics Corp.Revised Date :2013.11.20 Page No. : 1/6 High Voltage NPN Epitaxial Planar Transistor BTNA44A3 Features High breakdown voltage. (BV =400V) CEO Low saturation voltage, typically V (sat) =60mV at I /I 10mA/1mA. CE C B= Complementary to BTPA94A3 Pb-free lead plating and halogen-free packag
btna44n3.pdf
Spec. No. : C210N3-H Issued Date : 2003.06.12 CYStech Electronics Corp.Revised Date : 2010.07.14 Page No. : 1/6 High Voltage NPN Epitaxial Planar Transistor BVCEO 400VIC 300mABTNA44N3 RCESAT(typ.) 10 Features High breakdown voltage. (BV =400V) CEO Low saturation voltage, typically V C B CE(sat) = 0.1V at I /I =10mA/1mA. Complementary to BTPA94N3
btna45n3.pdf
Spec. No. : C241N3 Issued Date : 2011.06.10 CYStech Electronics Corp.Revised Date : Page No. : 1/7 NPN High Voltage Planar Transistor BVCEO 500VIC 150mABTNA45N3 VCESAT 150mV (max)Features High breakdown voltage. (BV =500V) CEO Low collector-emitter saturation voltage V . CESAT High collector current capability I and I . C CM High collector current
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
