BTNA42A3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTNA42A3
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Noise Figure, dB: -
Package: TO-92
BTNA42A3 Transistor Equivalent Substitute - Cross-Reference Search
BTNA42A3 Datasheet (PDF)
btna42a3.pdf
Spec. No. : C209A3-H Issued Date : 2003.03.18 CYStech Electronics Corp.Revised Date : 2013.11.06 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BTNA42A3Description High breakdown voltage. (BV =300V) CEO Low collector output capacitance. (Typ. 3pF at V =30V) CB Ideal for chroma circuit. Pb-free lead plating and halogen-free package Symbo
btna45a3.pdf
Spec. No. : C241A3 Issued Date : 2011.06.10 CYStech Electronics Corp.Revised Date : 2013.11.22 Page No. : 1/7 NPN High Voltage Planar Transistor BVCEO 500VIC 150mABTNA45A3VCESAT 150mV (max)Description High breakdown voltage. (BV =500V) CEO Low collector-emitter saturation voltage V . CESAT High collector current capability I and I . C CM High coll
btna44m3.pdf
Spec. No. : C211M3 Issued Date : 2013.05.09 CYStech Electronics Corp.Revised Date : 2013.08.05 Page No. : 1/6 High Voltage NPN Epitaxial Planar Transistor BTNA44M3 Features High breakdown voltage. (BV = 400V) CEO Low saturation voltage, typically V C BCE(sat) = 60mV at I /I =10mA/1mA. Complementary to BTPA94M3 Symbol Outline BTNA44M3 SOT-89 BBase
btna44a3.pdf
Spec. No. : C211A3 Issued Date : 2003.03.026 CYStech Electronics Corp.Revised Date :2013.11.20 Page No. : 1/6 High Voltage NPN Epitaxial Planar Transistor BTNA44A3 Features High breakdown voltage. (BV =400V) CEO Low saturation voltage, typically V (sat) =60mV at I /I 10mA/1mA. CE C B= Complementary to BTPA94A3 Pb-free lead plating and halogen-free packag
btna44n3.pdf
Spec. No. : C210N3-H Issued Date : 2003.06.12 CYStech Electronics Corp.Revised Date : 2010.07.14 Page No. : 1/6 High Voltage NPN Epitaxial Planar Transistor BVCEO 400VIC 300mABTNA44N3 RCESAT(typ.) 10 Features High breakdown voltage. (BV =400V) CEO Low saturation voltage, typically V C B CE(sat) = 0.1V at I /I =10mA/1mA. Complementary to BTPA94N3
btna45n3.pdf
Spec. No. : C241N3 Issued Date : 2011.06.10 CYStech Electronics Corp.Revised Date : Page No. : 1/7 NPN High Voltage Planar Transistor BVCEO 500VIC 150mABTNA45N3 VCESAT 150mV (max)Features High breakdown voltage. (BV =500V) CEO Low collector-emitter saturation voltage V . CESAT High collector current capability I and I . C CM High collector current
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2S18 | BTD1768BA3 | GD242
History: 2S18 | BTD1768BA3 | GD242
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