BTNA45A3
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BTNA45A3
Código: NA45
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.625
W
Tensión colector-base (Vcb): 500
V
Tensión colector-emisor (Vce): 500
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 0.15
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 50
MHz
Capacitancia de salida (Cc): 5
pF
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta:
TO-92
Búsqueda de reemplazo de transistor bipolar BTNA45A3
BTNA45A3
Datasheet (PDF)
..1. Size:265K cystek
btna45a3.pdf 
Spec. No. : C241A3 Issued Date : 2011.06.10 CYStech Electronics Corp.Revised Date : 2013.11.22 Page No. : 1/7 NPN High Voltage Planar Transistor BVCEO 500VIC 150mABTNA45A3VCESAT 150mV (max)Description High breakdown voltage. (BV =500V) CEO Low collector-emitter saturation voltage V . CESAT High collector current capability I and I . C CM High coll
8.1. Size:254K cystek
btna45n3.pdf
Spec. No. : C241N3 Issued Date : 2011.06.10 CYStech Electronics Corp.Revised Date : Page No. : 1/7 NPN High Voltage Planar Transistor BVCEO 500VIC 150mABTNA45N3 VCESAT 150mV (max)Features High breakdown voltage. (BV =500V) CEO Low collector-emitter saturation voltage V . CESAT High collector current capability I and I . C CM High collector current
9.1. Size:234K cystek
btna44m3.pdf
Spec. No. : C211M3 Issued Date : 2013.05.09 CYStech Electronics Corp.Revised Date : 2013.08.05 Page No. : 1/6 High Voltage NPN Epitaxial Planar Transistor BTNA44M3 Features High breakdown voltage. (BV = 400V) CEO Low saturation voltage, typically V C BCE(sat) = 60mV at I /I =10mA/1mA. Complementary to BTPA94M3 Symbol Outline BTNA44M3 SOT-89 BBase
9.2. Size:243K cystek
btna44a3.pdf
Spec. No. : C211A3 Issued Date : 2003.03.026 CYStech Electronics Corp.Revised Date :2013.11.20 Page No. : 1/6 High Voltage NPN Epitaxial Planar Transistor BTNA44A3 Features High breakdown voltage. (BV =400V) CEO Low saturation voltage, typically V (sat) =60mV at I /I 10mA/1mA. CE C B= Complementary to BTPA94A3 Pb-free lead plating and halogen-free packag
9.3. Size:255K cystek
btna44n3.pdf
Spec. No. : C210N3-H Issued Date : 2003.06.12 CYStech Electronics Corp.Revised Date : 2010.07.14 Page No. : 1/6 High Voltage NPN Epitaxial Planar Transistor BVCEO 400VIC 300mABTNA44N3 RCESAT(typ.) 10 Features High breakdown voltage. (BV =400V) CEO Low saturation voltage, typically V C B CE(sat) = 0.1V at I /I =10mA/1mA. Complementary to BTPA94N3
9.4. Size:242K cystek
btna42a3.pdf
Spec. No. : C209A3-H Issued Date : 2003.03.18 CYStech Electronics Corp.Revised Date : 2013.11.06 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BTNA42A3Description High breakdown voltage. (BV =300V) CEO Low collector output capacitance. (Typ. 3pF at V =30V) CB Ideal for chroma circuit. Pb-free lead plating and halogen-free package Symbo
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