BTNA45N3 Todos los transistores

 

BTNA45N3 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BTNA45N3

Código: LK

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 500 V

Tensión colector-emisor (Vce): 500 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 0.15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 50 MHz

Capacitancia de salida (Cc): 5 pF

Ganancia de corriente contínua (hFE): 120

Encapsulados: SOT-23

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BTNA45N3 datasheet

 ..1. Size:254K  cystek
btna45n3.pdf pdf_icon

BTNA45N3

Spec. No. C241N3 Issued Date 2011.06.10 CYStech Electronics Corp. Revised Date Page No. 1/7 NPN High Voltage Planar Transistor BVCEO 500V IC 150mA BTNA45N3 VCESAT 150mV (max) Features High breakdown voltage. (BV =500V) CEO Low collector-emitter saturation voltage V . CESAT High collector current capability I and I . C CM High collector current

 8.1. Size:265K  cystek
btna45a3.pdf pdf_icon

BTNA45N3

Spec. No. C241A3 Issued Date 2011.06.10 CYStech Electronics Corp. Revised Date 2013.11.22 Page No. 1/7 NPN High Voltage Planar Transistor BVCEO 500V IC 150mA BTNA45A3 VCESAT 150mV (max) Description High breakdown voltage. (BV =500V) CEO Low collector-emitter saturation voltage V . CESAT High collector current capability I and I . C CM High coll

 9.1. Size:234K  cystek
btna44m3.pdf pdf_icon

BTNA45N3

Spec. No. C211M3 Issued Date 2013.05.09 CYStech Electronics Corp. Revised Date 2013.08.05 Page No. 1/6 High Voltage NPN Epitaxial Planar Transistor BTNA44M3 Features High breakdown voltage. (BV = 400V) CEO Low saturation voltage, typically V C B CE(sat) = 60mV at I /I =10mA/1mA. Complementary to BTPA94M3 Symbol Outline BTNA44M3 SOT-89 B Base

 9.2. Size:243K  cystek
btna44a3.pdf pdf_icon

BTNA45N3

Spec. No. C211A3 Issued Date 2003.03.026 CYStech Electronics Corp. Revised Date 2013.11.20 Page No. 1/6 High Voltage NPN Epitaxial Planar Transistor BTNA44A3 Features High breakdown voltage. (BV =400V) CEO Low saturation voltage, typically V (sat) =60mV at I /I 10mA/1mA. CE C B= Complementary to BTPA94A3 Pb-free lead plating and halogen-free packag

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