BTP2907A3 Todos los transistores

 

BTP2907A3 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BTP2907A3

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.625 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 200 MHz

Capacitancia de salida (Cc): 8 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: TO-92

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BTP2907A3 datasheet

 ..1. Size:173K  cystek
btp2907a3.pdf pdf_icon

BTP2907A3

Spec. No. C317A3-H Issued Date 2002.06.11 CYStech Electronics Corp. Revised Date 2005.06.29 Page No. 1/5 General Purpose PNP Epitaxial Planar Transistor BTP2907A3 Description The BTP2907A3 is designed for general purpose amplifier and high-speed switching, medium power applications. Low collector saturation voltage High speed switching. Complementa

 6.1. Size:258K  cystek
btp2907an3.pdf pdf_icon

BTP2907A3

Spec. No. C317N3 Issued Date 2003.06.30 CYStech Electronics Corp. Revised Date 2008.03.21 Page No. 1/6 General Purpose PNP Epitaxial Planar Transistor BTP2907AN3 Description The BTP2907AN3 is designed for general purpose amplifier applications. It is housed in the SOT-23 package which is designed for low power surface mount applications. Low V CE(sat)

 6.2. Size:192K  cystek
btp2907al3.pdf pdf_icon

BTP2907A3

Spec. No. C317L3-H Issued Date 2003.04.15 CYStech Electronics Corp. Revised Date 2006.07.04 Page No. 1/5 General Purpose PNP Epitaxial Planar Transistor BTP2907AL3 Description The BTP2907AL3 is designed for general purpose amplifier applications. It is housed in the SOT-223 package which is designed for medium power surface mount applications. Low V CE(sat)

 7.1. Size:257K  cystek
btp2907sl3.pdf pdf_icon

BTP2907A3

Spec. No. C824L3 Issued Date 2003.07.31 CYStech Electronics Corp. Revised Date 2013.11.12 Page No. 1/7 Low V PNP Epitaxial Planar Transistor CE(sat) BTP2907SL3 Features Excellent DC current gain characteristics Low Saturation Voltage V (sat)=-0.5V(max) (I =-1A, I =-100mA). CE C B Pb-free lead plating and halogen-free package Symbol Outline BTP2907SL3

Otros transistores... BTNH10N3 , BTP949L3 , BTP953L3 , BTP955J3 , BTP955L3 , BTP955M3 , BTP1955L3 , BTP2014L3 , 13009 , BTP2907AL3 , BTP2907AN3 , BTP2907SL3 , BTP3906A3 , BTP3906N3 , BTP5401A3 , BTP8550A3 , BTP8550BA3 .

History: BDT20 | 2SB982 | SD1460 | 2SB1362 | 2SC319

 

 

 

 

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