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BTP2907A3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BTP2907A3
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.625 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.6 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Capacitancia de salida (Cc): 8 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: TO-92

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BTP2907A3 Datasheet (PDF)

 ..1. Size:173K  cystek
btp2907a3.pdf

BTP2907A3
BTP2907A3

Spec. No. : C317A3-H Issued Date : 2002.06.11 CYStech Electronics Corp.Revised Date : 2005.06.29 Page No. : 1/5 General Purpose PNP Epitaxial Planar Transistor BTP2907A3Description The BTP2907A3 is designed for general purpose amplifier and high-speed switching, medium power applications. Low collector saturation voltage High speed switching. Complementa

 6.1. Size:258K  cystek
btp2907an3.pdf

BTP2907A3
BTP2907A3

Spec. No. : C317N3 Issued Date : 2003.06.30 CYStech Electronics Corp.Revised Date : 2008.03.21 Page No. : 1/6 General Purpose PNP Epitaxial Planar Transistor BTP2907AN3Description The BTP2907AN3 is designed for general purpose amplifier applications. It is housed in the SOT-23 package which is designed for low power surface mount applications. Low V CE(sat)

 6.2. Size:192K  cystek
btp2907al3.pdf

BTP2907A3
BTP2907A3

Spec. No. : C317L3-H Issued Date : 2003.04.15 CYStech Electronics Corp.Revised Date : 2006.07.04 Page No. : 1/5 General Purpose PNP Epitaxial Planar Transistor BTP2907AL3Description The BTP2907AL3 is designed for general purpose amplifier applications. It is housed in the SOT-223 package which is designed for medium power surface mount applications. Low V CE(sat)

 7.1. Size:257K  cystek
btp2907sl3.pdf

BTP2907A3
BTP2907A3

Spec. No. : C824L3 Issued Date : 2003.07.31 CYStech Electronics Corp.Revised Date :2013.11.12 Page No. : 1/7 Low V PNP Epitaxial Planar Transistor CE(sat)BTP2907SL3Features Excellent DC current gain characteristics Low Saturation Voltage V (sat)=-0.5V(max) (I =-1A, I =-100mA). CE C B Pb-free lead plating and halogen-free package Symbol OutlineBTP2907SL3

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP31C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

 

 
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