BTP2907A3 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

BTP2907A3 Specs and Replacement

Type Designator: BTP2907A3

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 8 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO-92

BTP2907A3 Substitution

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BTP2907A3 datasheet

..1. Size:173K cystek

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Spec. No. C317A3-H Issued Date 2002.06.11 CYStech Electronics Corp. Revised Date 2005.06.29 Page No. 1/5 General Purpose PNP Epitaxial Planar Transistor BTP2907A3 Description The BTP2907A3 is designed for general purpose amplifier and high-speed switching, medium power applications. Low collector saturation voltage High speed switching. Complementa... See More ⇒

6.1. Size:258K cystek

btp2907an3.pdf pdf_icon

Spec. No. C317N3 Issued Date 2003.06.30 CYStech Electronics Corp. Revised Date 2008.03.21 Page No. 1/6 General Purpose PNP Epitaxial Planar Transistor BTP2907AN3 Description The BTP2907AN3 is designed for general purpose amplifier applications. It is housed in the SOT-23 package which is designed for low power surface mount applications. Low V CE(sat) ... See More ⇒

6.2. Size:192K cystek

btp2907al3.pdf pdf_icon

Spec. No. C317L3-H Issued Date 2003.04.15 CYStech Electronics Corp. Revised Date 2006.07.04 Page No. 1/5 General Purpose PNP Epitaxial Planar Transistor BTP2907AL3 Description The BTP2907AL3 is designed for general purpose amplifier applications. It is housed in the SOT-223 package which is designed for medium power surface mount applications. Low V CE(sat)... See More ⇒

7.1. Size:257K cystek

btp2907sl3.pdf pdf_icon

Spec. No. C824L3 Issued Date 2003.07.31 CYStech Electronics Corp. Revised Date 2013.11.12 Page No. 1/7 Low V PNP Epitaxial Planar Transistor CE(sat) BTP2907SL3 Features Excellent DC current gain characteristics Low Saturation Voltage V (sat)=-0.5V(max) (I =-1A, I =-100mA). CE C B Pb-free lead plating and halogen-free package Symbol Outline BTP2907SL3... See More ⇒

Detailed specifications: BTNH10N3, BTP949L3, BTP953L3, BTP955J3, BTP955L3, BTP955M3, BTP1955L3, BTP2014L3, 13009, BTP2907AL3, BTP2907AN3, BTP2907SL3, BTP3906A3, BTP3906N3, BTP5401A3, BTP8550A3, BTP8550BA3