HBC8472S6R Todos los transistores

 

HBC8472S6R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HBC8472S6R
   Código: CK
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 80 MHz
   Capacitancia de salida (Cc): 2 pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: SOT-363R
 

 Búsqueda de reemplazo de HBC8472S6R

   - Selección ⓘ de transistores por parámetros

 

HBC8472S6R Datasheet (PDF)

 ..1. Size:251K  cystek
hbc8472s6r.pdf pdf_icon

HBC8472S6R

Spec. No. : C202S6R Issued Date : 2010.03.22 CYStech Electronics Corp.Revised Date : 2011.02.22 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistors (dual transistors) HBC8472S6R Features Two BTC2412 chips in a SOT-363R package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminating interference.

 8.1. Size:38K  hsmc
hbc847.pdf pdf_icon

HBC8472S6R

Spec. No. : HE6827HI-SINCERITYIssued Date : 1993.11.28Revised Date : 2004.09.01MICROELECTRONICS CORP.Page No. : 1/4HBC847NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HBC847 is designed for switching and AF amplifier amplification suitable forautomatic insertion in thick and thin-film circuits.SOT-23Absolute Maximum Ratings Maximum TemperaturesStorage Temperature.

 8.2. Size:250K  cystek
hbc8471s6r.pdf pdf_icon

HBC8472S6R

Spec. No. : C202S6R Issued Date : 2010.03.22 CYStech Electronics Corp.Revised Date : 2011.02.22 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistors (dual transistors) HBC8471S6R Features Two BTC2412 chips in a SOT-363R package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminating interference.

 9.1. Size:66K  hsmc
hbc848.pdf pdf_icon

HBC8472S6R

Spec. No. : HE6843 HI-SINCERITY Issued Date : 1994.07.29 Revised Date : 2008.01.30 MICROELECTRONICS CORP. Page No. : 1/4 HBC848 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC848 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits. SOT-23 Absolute Maximum Ratings Maximum Temperatures Storag

Otros transistores... D44H11J3 , D45H11E3 , D45H11J3 , DTA144WS3 , FBP5096G3 , HBA1873S5 , HBA8573S6R , HBC8471S6R , 2SC2625 , HBN2411S6R , HBN2412C6 , HBN2412S6R , HBN2444S6R , HBN2515S6R , HBN3101S6R , HBNP45C6 , HBNP45S6R .

History: PBHV9414Z | SFT250 | BFY45 | 2N1146A | DTS3704B | 2SC395A | BC349

 

 
Back to Top

 


 
.